SDINB11024 SanDisk, SDINB11024 Datasheet - Page 25

• Manufacturer Part Number: SDINB11024
• Manufacturer: SanDisk

Specifications of SDINB11024

• Lead Free Status / RoHS Status: Compliant

Revision 3.1
© 2006 SanDisk Corporation
C1=C3>=2.2uF
C2=C4<=100nF
C1, C2: X7R or XR5
Appendix A
A.1
C1
Close to ball F1
VSS
SanDisk iNAND Operation
In order for iNAND to operate at 3V, an external capacitor must be added to the FCAP
(G8) pin and grounded to VSS.
instructions are detailed below.
The trace requirements from the FCAP (G8) pin to the capacitor are as follows:
•
•
The capacitor requirements are as follows:
•
•
•
C2
Resistance: <2 ohm
Inductance: <5 nH
Capacitance: >=2.2uF
Voltage: >=6.3 V
Dielectric: X7R or X5R
VSS
Capacitor Specifications
VDD
F1
C1=C3>=2.2uF
C2=C4<=100nF
C3, C4: X7R or XR5
Bottom View
Close to ball A6
A-1
The capacitor’s specifications and its placement
VDD
VSS
A6
C3
FCAP
VSS
G8
C4
Appendix A –Capacitor Specifications
SanDisk iNAND Product Manual
VSS
Capacitor
Requirements:
Capacitance > =2.2uF
Voltage > =6.3V
Dielectric X7R or XR5
Trace
Requirements:
Resistance < 2 ohm
Inductance < 5 nH
12/07/06