MT18LSDT3272AG-133G3 Micron Technology Inc, MT18LSDT3272AG-133G3 Datasheet - Page 14

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MT18LSDT3272AG-133G3

Manufacturer Part Number
MT18LSDT3272AG-133G3
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT18LSDT3272AG-133G3

Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168UDIMM
Device Core Size
72b
Organization
32Mx72
Total Density
256MByte
Chip Density
128Mb
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
1.368A
Number Of Elements
18
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT18LSDT3272AG-133G3
Manufacturer:
MICRON
Quantity:
4 384
Table 12: I
Notes: 1, 5, 6, 11, 13; notes appear on page 18; V
Table 13: I
Notes: 1, 5, 6, 11, 13; notes appear on page 18; V
09005aef807b3709
SD9_18C16_32x72AG.fm - Rev. E 6/04 EN
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
STANDBY CURRENT: Power-Down Mode; All device banks idle;
CKE = LOW
STANDBY CURRENT: Active Mode;CKE = HIGH; CS# = HIGH; All
device banks active after
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT
CKE = HIGH; CS# = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
PARAMETER/CONDITION
NOTE:
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
STANDBY CURRENT: Power-Down Mode; All device banks idle;
CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All
device banks active after
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT
CKE = HIGH; CS# = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
RC =
RC =
a - Value calculated as one module rank in this condition, and all other module ranks in Power-Down Mode (I
b - Value calculated reflects all module ranks in this condition.
t
t
RC (MIN)
RC (MIN)
DD
DD
Specifications and Conditions – 128MB
Specifications and Conditions – 256MB
t
t
RCD met; No accesses in progress
RCD met; No accesses in progress
128MB (x72, ECC, SR), 256MB (x72, ECC, DR)
t
t
Standard
Low Power
t
t
Standard
Low Power
RFC =
RFC = 15.625µs
RFC =
RFC = 15.625µs
DD
DD
, V
, V
t
t
RFC (MIN)
RFC (MIN)
DD
DD
Q = +3.3V ±0.3V; SDRAM component values only
Q = +3.3V ±0.3V; SDRAM component values only
14
SYMBOL
SYMBOL
I
I
I
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
I
DD
DD
DD
DD
DD
DD
DD
1
2
3
4
5
6
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
2
3
4
5
6
7
b
b
b
b
a
a
a
1,458 1,368 1,278
1,503 1,368 1,278
5,940 5,580 4,860
1,125 1,035
1,350 1,260 1,080
2,070 1,890 1,710
-13E
-13E
468
405
36
54
36
27
18
27
18
9
168-PIN SDRAM UDIMM
MAX
MAX
-133 -10E
-133 -10E
468
405
36
54
36
27
18
27
18
9
378
855
315
36
54
36
27
18
27
18
9
UNITS
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
©2004 Micron Technology, Inc.
18, 19, 30, 31
18, 19, 30, 31
3, 18, 19, 30
3, 12, 19, 30
3, 18, 19, 30
3, 18, 19, 30
3, 12, 19, 30
3, 18, 19, 30
NOTES
NOTES
3, 12
3, 12
DD 2
30
30
4
4
4
4
).

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