CBTU4411EE-T NXP Semiconductors, CBTU4411EE-T Datasheet

CBTU4411EE-T

Manufacturer Part Number
CBTU4411EE-T
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of CBTU4411EE-T

Operating Temperature (max)
85C
Operating Temperature (min)
0C
Mounting
Surface Mount
Lead Free Status / RoHS Status
Compliant
1. General description
This 11-bit bus switch is designed for 1.7 V to 1.9 V V
input levels.
Each Host port pin (HPn) is multiplexed to one of four DIMM port pins (xDPn). The
selection of the DIMM port to be connected to the Host port is controlled by a decoder
driven by three hardware select pins S0, S1 and EN. Driving pin EN HIGH disconnects all
DIMM ports from their respective host ports. When EN is driven LOW, pins S0 and S1
select one of four DIMM ports to be connected to their respective host port. When
disconnected, any DIMM port is terminated to the externally supplied voltage V
means of an on-chip pull-down resistor of typically 400 . The ON-state connects the
Host port to the DIMM port through a 12
intended to have only one DIMM port active at any time.
The CBTU4411 can also be configured to support a differential strobe signal on
channel 10 (TRUE) and channel 9 (complementary Strobe). When its LVCMOS
configuration input strobe enable (STREN) is HIGH, channel 10 is pulled up to
internally by a resistive divider when the DIMM port is idle. When the CBTU4411 is
disabled (EN = HIGH in Strobe mode), the pull-down on channel 10 is disabled for current
savings, pulling channel 10 to V
behaves the same as all other channels.
The select inputs (S0, S1) are pseudo-differential type SSTL_18. A reference voltage
should be provided to input pin VREF at nominally 0.5V
accurate control of switching times by reducing dependency on select signal slew rates.
S0 and S1 are provided with selectable input termination to 0.5V
input TERM is HIGH). When the CBTU4411 is disabled (EN = HIGH), both S0 and S1
inputs are pulled LOW.
The part incorporates a very low crosstalk design. It has a very low skew between outputs
(< 30 ps) and low skew (< 30 ps) for rising and falling edges. The part has optimal
performance in DDR2 data bus applications.
Each switch has been optimized for connection to 1- or 2-rank DIMMs.
The low internal RC time constant of the switch allows data transfer to be made with
minimal propagation delay.
The CBTU4411 is characterized for operation from 0 C to +85 C.
CBTU4411
11-bit DDR2 SDRAM MUX/bus switch with 12
Rev. 03 — 12 October 2009
DD
. When strobe enable (STREN) is LOW, channel 10
nominal series resistance. The design is
DD
DD
operation and SSTL_18 select
. This topology provides
DD
(active when LVCMOS
Product data sheet
ON resistance
3
bias
4
of V
by
DD

Related parts for CBTU4411EE-T

CBTU4411EE-T Summary of contents

Page 1

CBTU4411 11-bit DDR2 SDRAM MUX/bus switch with 12 Rev. 03 — 12 October 2009 1. General description This 11-bit bus switch is designed for 1 1 input levels. Each Host port pin (HPn) is multiplexed to ...

Page 2

... ESD protection exceeds 1500 V HBM per JESD22-A114, 200 V MM per JESD22-A115, and 750 V CDM per JESD22-C101 3. Ordering information Table +85 C. amb Type number CBTU4411EE CBTU4411_3 Product data sheet 11-bit DDR2 SDRAM MUX/bus switch with 12 ON-resistance pull-down resistors on xDPn port Ordering information Package ...

Page 3

... NXP Semiconductors 4. Functional diagram VREF TERM STREN (1) Selectable. Fig 1. HPn A from switch control Fig 2. CBTU4411_3 Product data sheet 11-bit DDR2 SDRAM MUX/bus switch with 12 HP0 HP10 (1) ( (1) ( CONTROL Functional diagram (positive logic xDPn SWITCH 400 VBIAS 002aae848 Simplified schematic, channel 0 to channel 9 Rev. 03 — ...

Page 4

... HP7 3DP8 2DP8 1DP8 3DP7 2DP7 Blank cell indicates no ball at that location. Ball mapping (transparent top view) Rev. 03 — 12 October 2009 CBTU4411 CBTU4411EE 002aae837 Transparent top view 2DP0 1DP1 2DP1 3DP1 0DP2 3DP0 0DP1 HP1 GND 0DP3 2DP3 2DP4 1DP5 ...

Page 5

... NXP Semiconductors 5.2 Pin description Table 2. Symbol HP0 to HP10 EN STREN S0 S1 VREF VBIAS TERM 0DP0, 1DP0, 2DP0, 3DP0 0DP1, 1DP1, 2DP1, 3DP1 0DP2, 1DP2, 2DP2, 3DP2 0DP3, 1DP3, 2DP3, 3DP3 0DP4, 1DP4, 2DP4, 3DP4 0DP5, 1DP5, 2DP5, 3DP5 0DP6, 1DP6, 2DP6, 3DP6 ...

Page 6

... NXP Semiconductors 6. Functional description Refer to 6.1 Function selection Table 3. Function selection, channel 0 to channel HIGH voltage level LOW voltage level; high-Z = high-impedance Don’t care. Inputs HPn high high high high-Z CBTU4411_3 Product data sheet 11-bit DDR2 SDRAM MUX/bus switch with 12 Figure 1 “ ...

Page 7

Table 4. Function selection, channel HIGH voltage level LOW voltage level; high-Z = high-impedance Don’t care. Inputs 0DP10 STREN HP10 VBIAS high ...

Page 8

... NXP Semiconductors 7. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). The package thermal impedance is calculated in accordance with JESD 51. Symbol stg [1] The input and output negative voltage ratings may be exceeded if the input and output clamping current ratings are observed. ...

Page 9

... NXP Semiconductors 9. Static characteristics Table 8. Static characteristics +85 C amb Symbol Parameter V input clamping voltage IK V termination voltage T V pull-up voltage pu I input leakage current LI I supply current DD C input capacitance in C switch on capacitance resistance resistance ON mismatch between channels R pull-down resistance pd R pull-up resistance ...

Page 10

... NXP Semiconductors Fig 6. 10. Dynamic characteristics Table 9. Dynamic characteristics V = 1 Symbol Parameter t propagation delay PD t driver enable delay to HIGH level PZH t driver enable delay to LOW level PZL t driver disable delay from HIGH level from Sn to HPn or xDPn PHZ t driver disable delay from LOW level from Sn to HPn or xDPn ...

Page 11

... NXP Semiconductors 11. HPn to xDPn AC waveforms and test circuit Fig 7. (1) See (2) Waveform 1 is for an output with internal conditions such that the output is HIGH except when Fig 8. Fig 9. CBTU4411_3 Product data sheet 11-bit DDR2 SDRAM MUX/bus switch with 12 input 0 PLH output Input to output propagation delays ...

Page 12

... NXP Semiconductors 12. xDPn to HPn AC waveforms and test circuit (1) See (2) Waveform 1 is for an output with internal conditions such that the output is LOW except when (3) Waveform 2 is for an output with internal conditions such that the output is HIGH except when Fig 10. 3-state output enable and disable times Fig 11 ...

Page 13

... NXP Semiconductors Fig 13. Test circuit (xDPn to HPn) 13. Test information Table 10. Condition bias V < 0.5V bias CBTU4411_3 Product data sheet 11-bit DDR2 SDRAM MUX/bus switch with HPn 2.54 cm (1") SSTL_18 driver All input pulses are supplied by generators having the following characteristics: PRR 10 MHz ...

Page 14

... NXP Semiconductors 14. Package outline LFBGA72: plastic low profile fine-pitch ball grid array package; 72 balls; body 1.05 mm ball A1 index area ball A1 index area DIMENSIONS (mm are the original dimensions) A UNIT max 0.3 1.20 0.35 mm 1.5 0.2 0.95 0.25 OUTLINE VERSION IEC SOT856-1 Fig 14. Package outline SOT856-1 (LFBGA72) ...

Page 15

... NXP Semiconductors 15. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description” . 15.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits ...

Page 16

... NXP Semiconductors 15.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • ...

Page 17

... NXP Semiconductors Fig 15. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description” . 16. Abbreviations Table 13. Acronym CDM DDR2 DIMM DQM ESD HBM LVCMOS MM MUX PRR RC SDRAM SSTL_18 ...

Page 18

... CBTU4411_3 20091012 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Section 2 667 Mbit/s, 200 MHz to 333 MHz DDR2 data bus” to “Suitable to be used with 400 Mbit/s to 800 Mbit/s, 200 MHz to 400 MHz DDR2 data bus” ...

Page 19

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 20

... NXP Semiconductors 20. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 5 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 5.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 5.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5 6 Functional description . . . . . . . . . . . . . . . . . . . 6 6.1 Function selection Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . 10 11 HPn to xDPn AC waveforms and test circuit . 11 12 xDPn to HPn AC waveforms and test circuit ...

Related keywords