BSM20GD60DLC Infineon Technologies, BSM20GD60DLC Datasheet - Page 6

• Manufacturer Part Number: BSM20GD60DLC
• Description: IGBT Modules 600V 20A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM20GD60DLC

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 32 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
1,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
2,0
1,8
1,6
1,4
1,2
1,0
0,8
0,6
0,4
0,2
0,0
0
0
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
5
5
Eon
Eoff
Erec
10
10
BSM 20 GD 60 DLC E3224
15
15
6 (8)
R
I
C
G
E
20
20
I
[A]
C
[ ]
= 20A , V
on
E
= f (R
R
G,on
on
= f (I
= 27
CC
= 300V , T
G
25
25
), E
C
= = = = R
), E
G,off
off
= f (R
= 27 , V
vj
off
= 125°C
= f (I
30
30
G
CC
), E
C
= 300V, T
), E
rec
rec
= f (R
Eon
Eoff
Erec
= f (I
vj
35
35
= 125°C
G
BSM 20 GD 60 DLC E3224
C
)
)
40
40