BSM20GD60DLC Infineon Technologies, BSM20GD60DLC Datasheet - Page 7

• Manufacturer Part Number: BSM20GD60DLC
• Description: IGBT Modules 600V 20A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM20GD60DLC

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 32 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,01
0,1
10
1
0,001
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
45
40
35
30
25
20
15
10
5
0
0
Transienter Wärmewiderstand
Transient thermal impedance
r
r
i
i
[K/kW]
i
[K/kW]
i
[sec]
[sec]
i
100
: IGBT
: IGBT
: Diode
: Diode
IC,Modul
IC,Chip
0,01
BSM 20 GD 60 DLC E3224
200
0,0018
0,0487
528,6
42,3
1
300
7 (8)
0,1
V
0,0240
0,0169
524,0
507,0
CE
400
2
t [sec]
[V]
Z
V
thJC
GE
= +15V, R
= f (t)
500
0,0651
0,1069
352,4
318,4
G,off
1
3
= 27
Zth:IGBT
Zth:Diode
T
600
vj
= 125°C
0,6626
0,9115
146,0
81,2
4
BSM 20 GD 60 DLC E3224
700
10