FZ1600R17KF6C_B2 Infineon Technologies, FZ1600R17KF6C_B2 Datasheet - Page 4

• Manufacturer Part Number: FZ1600R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 2.6KA
• Manufacturer: Infineon Technologies

Specifications of FZ1600R17KF6C_B2

• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 2600 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 12.5 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 1,600.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Not Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
3500
3000
2500
2000
1500
1000
3500
3000
2500
2000
1500
1000
500
500
0
0
0,0
0,0
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
Ausgangskennlinie (typisch)
Output characteristic (typical)
0,5
0,5
1,0
1,0
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
FZ1600R17KF6C B2
1,5
1,5
2,0
2,0
4(8)
V
V
2,5
2,5
CE
CE
[V]
[V]
3,0
3,0
V
I
GE
C
= f (V
= 15V
3,5
3,5
I
C
T
vj
= f (V
CE
= 125°C
4,0
4,0
)
Tj = 25°C
Tj = 125°C
CE
)
4,5
4,5
5,0
5,0
FZ1600R17KF6C B2.xls