FZ1600R17KF6C_B2 Infineon Technologies, FZ1600R17KF6C_B2 Datasheet - Page 6

• Manufacturer Part Number: FZ1600R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 2.6KA
• Manufacturer: Infineon Technologies

Specifications of FZ1600R17KF6C_B2

• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 2600 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 12.5 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 1,600.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Not Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
1800
1600
1400
1200
1000
2500
2000
1500
1000
Schaltverluste (typisch)
Switching losses (typical)
800
600
400
200
500
Schaltverluste (typisch)
Switching losses (typical)
0
0
0
0
500
1
Eon
Eoff
Erec
Eoff
Eon
Erec
1000
FZ1600R17KF6C B2
2
E
R
on
gon
= f (I
= R
1500
E
goff
6(8)
3
on
C
I
R
) , E
C
I
=0,9Ω Ω Ω Ω
C
G
= f (R
= 1600A , V
[A]
[Ω Ω Ω Ω ]
off
,
V
2000
= f (I
G
CE
) , E
4
= 900V, T
CE
C
off
) , E
= 900V , T
= f (R
rec
2500
j
= 125°C, V
= f (I
5
G
j
) , E
= 125°C, V
C
)
rec
GE
3000
= f (R
=
6
±
GE
15V
= ± 15V
G
)
3500
FZ1600R17KF6C B2.xls
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