FZ1600R17KF6C_B2 Infineon Technologies, FZ1600R17KF6C_B2 Datasheet - Page 8

• Manufacturer Part Number: FZ1600R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 2.6KA
• Manufacturer: Infineon Technologies

Specifications of FZ1600R17KF6C_B2

• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 2600 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 12.5 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 1,600.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Not Compliant

Technische Information / Technical Information
IGBT-Module
FZ1600R17KF6C B2
IGBT-Modules
Äußere Abmessungen / external dimensions
8(8)
FZ1600R17KF6C B2.xls