BSM10GP120 Infineon Technologies, BSM10GP120 Datasheet - Page 7

• Manufacturer Part Number: BSM10GP120
• Description: IGBT Modules 1200V 10A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM10GP120

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.4 V
• Continuous Collector Current At 25 C: 20 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM2
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
1,6
1,4
1,2
0,8
0,6
0,4
0,2
1
0
3,5
2,5
1,5
0,5
4
3
2
1
0
0
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
Schaltverluste Wechselr. (typisch)
Switching losses Inverter (typical)
0
20
Eon
Eoff
Erec
5
Eon
Eoff
Erec
40
BSM10GP120
R
10
I
C
60
G
[A]
7(11)
[ ]
T
E
T
on
j
E
= 125°C,
j
on
= 125°C, V
= f (I
= f (R
C
), E
80
G
), E
GE
off
15
V
= +-15 V ,
off
= f (I
GE
= ±15 V,
= f (R
C
), E
100
G
), E
rec
I
c
= I
= f (I
rec
nenn
R
Gon
= f (R
20
C
,
)
= R
V
120
V
CC
CC
G
Goff
)
=
=
=
600 V
82 Ohm
600 V
140
25
DB-PIM-9.xls