BSM10GP120 Infineon Technologies, BSM10GP120 Datasheet - Page 9

• Manufacturer Part Number: BSM10GP120
• Description: IGBT Modules 1200V 10A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM10GP120

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.4 V
• Continuous Collector Current At 25 C: 20 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM2
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0
0
Durchlaßkennlinie der Brems-Chopper-Diode (typisch)
Forward characteristic of brake-chopper-FWD (typical)
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch)
Output characteristic brake-chopper-IGBT (typical)
0,5
0,5
1
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
BSM10GP120
1,5
1
V
V
CE
F
9(11)
2
[V]
[V]
1,5
2,5
3
2
F
I
= f (V
C
I
V
= f (V
GE
3,5
F
)
= 15 V
2,5
CE
)
4
4,5
3
DB-PIM-9.xls