BSM200GB60DLC Infineon Technologies, BSM200GB60DLC Datasheet - Page 3

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BSM200GB60DLC

Manufacturer Part Number
BSM200GB60DLC
Description
IGBT Modules 600V 200A DUAL
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSM200GB60DLC

Configuration
Dual
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.95 V
Continuous Collector Current At 25 C
200 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
445 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IS4 ( 34 mm )
Ic (max)
200.0 A
Vce(sat) (typ)
1.95 V
Technology
IGBT2 Low Loss
Housing
34 mm
Lead Free Status / RoHS Status
Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSM200GB60DLC
Manufacturer:
SIEMENS
Quantity:
530
Part Number:
BSM200GB60DLC
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM200GB60DLC
Quantity:
50
Company:
Part Number:
BSM200GB60DLC
Quantity:
300
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Kriechstrecke
creepage insulation
Luftstrecke
clearance
CTI
comperative tracking index
Anzugsdrehmoment für mech. Befestigung
mounting torque
Gewicht
weight
IGBT-Module
IGBT-Modules
Thermische Eigenschaften / Thermal properties
Mechanische Eigenschaften / Mechanical properties
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics.
It is valid in combination with the belonging technical notes.
Technische Information / Technical Information
Transistor / transistor, DC
Diode / diode, DC
pro Modul / per module
Schraube M6
screw M6
BSM 200 GB 60 DLC
Paste
= 1W/m*K /
3 (8)
grease
= 1W/m*K
R
R
T
M1
T
T
G
thJC
thCK
stg
op
vj
min.
-40
-40
-15
-
-
-
-
Al
typ.
0,02
275
180
8,5
15
2
5
-
-
-
-
-
O
BSM 200 GB 60 DLC
3
max.
0,17
0,29
150
125
125
+15
2000-02-08
-
K/W
K/W
K/W
mm
mm
Nm
°C
°C
°C
%
g

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