BSM200GB60DLC Infineon Technologies, BSM200GB60DLC Datasheet - Page 7

• Manufacturer Part Number: BSM200GB60DLC
• Description: IGBT Modules 600V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM200GB60DLC

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 445 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IS4 ( 34 mm )
• Ic (max): 200.0 A
• Vce(sat) (typ): 1.95 V
• Technology: IGBT2 Low Loss
• Housing: 34 mm
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
1
0,001
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
450
400
350
300
250
200
150
100
50
0
Transienter Wärmewiderstand
Transient thermal impedance
0
r
r
i
i
[K/kW]
[K/kW]
i
i
[sec]
[sec]
i
100
: IGBT
: IGBT
: Diode
: Diode
0,01
BSM 200 GB 60 DLC
200
0,0018
0,0487
102,2
7,2
1
IC,Modul
IC,Chip
7 (8)
300
0,1
V
0,0240
0,0169
89,1
98,0
CE
400
2
t [sec]
[V]
Z
V
thJC
GE
= +15V, R
= f (t)
500
0,0651
0,1069
59,9
61,6
G,off
1
3
= 1,5
Zth:IGBT
Zth:Diode
T
600
vj
= 125°C
0,9115
0,6626
13,8
28,2
4
BSM 200 GB 60 DLC
700
10
2000-02-08