BSM200GB60DLC Infineon Technologies, BSM200GB60DLC Datasheet - Page 4

• Manufacturer Part Number: BSM200GB60DLC
• Description: IGBT Modules 600V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM200GB60DLC

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 445 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IS4 ( 34 mm )
• Ic (max): 200.0 A
• Vce(sat) (typ): 1.95 V
• Technology: IGBT2 Low Loss
• Housing: 34 mm
• Lead Free Status / RoHS Status: Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
400
350
300
250
200
150
100
400
350
300
250
200
150
100
50
50
0
0
0,0
0,0
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
Ausgangskennlinie (typisch)
Output characteristic (typical)
0,5
0,5
1,0
Tvj = 25°C
Tvj = 125°C
VGE = 8V
VGE = 9V
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
1,0
BSM 200 GB 60 DLC
1,5
2,0
1,5
4 (8)
V
V
CE
CE
2,5
[V]
[V]
2,0
3,0
I
V
C
GE
= f (V
= 15V
I
T
C
vj
= f (V
= 125°C
3,5
CE
2,5
)
CE
)
4,0
3,0
4,5
BSM 200 GB 60 DLC
3,5
5,0
2000-02-08