BSM 200 GB 120 DN2 Infineon Technologies, BSM 200 GB 120 DN2 Datasheet - Page 6

• Manufacturer Part Number: BSM 200 GB 120 DN2
• Manufacturer: Infineon Technologies

Specifications of BSM 200 GB 120 DN2

• Channel Type: N
• Configuration: Dual
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Compliant

BSM 200 GB 120 DN2
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
I
Cpuls
parameter: V
Cpuls
V
GE
GE
/I
C
= (Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0
0
Gate
CE
200
C puls
200
)
GE
)
,
= 15 V
T
400
= 200 A
j
400
= 150°C
600
600
600 V
800 1000 1200
800
1000
800 V
nC
Q
V
V
Gate
CE
1400
1600
6
Typ. capacitances
C = f (V
Short circuit safe operating area
I
I
parameter: V
Csc
parameter: V
Csc
C
/I
C
= f(V
10
10
10
10
nF
12
-1
8
6
4
2
0
2
1
0
CE
0
0
CE
)
) , T
200
5
GE
GE
j
= ± 15 V, t
= 150°C
400
= 0 V, f = 1 MHz
10
600
15
800 1000 1200
20
SC
25
10 µs, L < 25 nH
30
Oct-21-1997
V
V
V
V
CE
CE
Ciss
Coss
Crss
1600
40