BSM 200 GB 120 DN2 Infineon Technologies, BSM 200 GB 120 DN2 Datasheet - Page 7

• Manufacturer Part Number: BSM 200 GB 120 DN2
• Manufacturer: Infineon Technologies

Specifications of BSM 200 GB 120 DN2

• Channel Type: N
• Configuration: Dual
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Compliant

BSM 200 GB 120 DN2
Typ. switching time
I = f (I
Typ. switching losses
E = f (I
par.: V
par.: V
E
t
mWs
10
10
10
10
100
C
ns
80
70
60
50
40
30
20
10
C
) , inductive load , T
CE
CE
0
4
3
2
1
) , inductive load , T
0
0
= 600 V, V
= 600 V, V
100
100
GE
GE
200
200
= ± 15 V, R
= ± 15 V, R
j
j
= 125°C
= 125°C
300
300
G
G
= 4.7
= 4.7
A
A
tdoff
tdon
tr
tf
Eon
Eoff
I
I
C
C
500
500
7
Typ. switching time
t = f (R
Typ. switching losses
E = f (R
par.: V
par.: V
E
t
mWs
10
10
10
10
100
ns
80
70
60
50
40
30
20
10
G
CE
CE
0
4
3
2
1
G
) , inductive load , T
0
0
) , inductive load , T
= 600 V, V
= 600V, V
10
10
20
20
GE
GE
= ± 15 V, I
= ± 15 V, I
30
30
j
j
= 125°C
= 125°C
40
40
C
C
= 200 A
= 200 A
Oct-21-1997
tdoff
tdon
tr
tf
Eon
Eoff
R
R
G
G
60
60