SI4966DY-T1-E3 Vishay, SI4966DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4966DY-T1-E3
• Description: DUAL N CHANNEL MOSFET, 20V, SOIC
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4966DY-T1-E3

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.025Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 7.1A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Power Dissipation: 2W
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Compliant

Si4966DY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
R
V
I
t
t
I
I
DS(on)
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
R
t
t
t
SD
rr
fs
gs
gd
r
f
g
g
V
V
I
DS
D
DS
≅ 1 A, V
I
= 10 V, V
F
V
= 20 V, V
V
V
V
V
V
V
= 1.7 A, dI/dt = 100 A/µs
V
DS
I
DS
DS
GS
GS
S
DD
DS
DS
Test Conditions
= 1.7 A, V
= 0 V, V
= V
≥ 5 V, V
= 2.5 V, I
= 20 V, V
= 4.5 V, I
= 10 V, R
= 10 V, I
GEN
f = 1 MHz
GS
GS
GS
, I
= 4.5 V, R
= 4.5 V, I
= 0 V, T
GS
D
GS
D
GS
D
D
GS
= 250 µA
L
= ± 12 V
= 7.1 A
= 4.5 V
= 7.1 A
= 6.0 A
= 10 Ω
= 0 V
= 0 V
J
D
g
= 55 °C
= 7.1 A
= 6 Ω
Min.
0.6
20
0.019
0.025
Typ.
S09-0869-Rev. D, 18-May-09
6.5
1.6
27
25
40
40
90
40
40
4
Document Number: 70718
± 100
0.025
0.035
Max.
150
1.5
1.2
2.7
50
60
60
60
80
1
5
Unit
nA
µA
nC
ns
Ω
Ω
V
A
S
V