SI4966DY-T1-E3 Vishay, SI4966DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4966DY-T1-E3
• Description: DUAL N CHANNEL MOSFET, 20V, SOIC
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4966DY-T1-E3

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.025Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 7.1A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Power Dissipation: 2W
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Compliant

Si4966DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70718.
www.vishay.com
4
0.01
- 0.2
- 0.4
- 0.6
0.1
0.4
0.2
0.0
40
10
2
1
1
0.0
- 50
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
0.4
T
- Source-to-Drain Voltage (V)
J
Threshold Voltage
T
= 150 °C
J
- Temperature (°C)
25
0.6
10
-3
50
Single Pulse
I
D
0.8
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
T
J
1.0
= 25 °C
100
1.2
125
10
-2
Square Wave Pulse Duration (s)
1.4
150
10
-1
0.10
0.08
0.06
0.04
0.02
0.00
30
24
18
12
0.01
6
0
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 7.1 A
1
V
GS
0.10
1
- Gate-to-Source Voltage (V)
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
2
Time (s)
- T
t
A
S09-0869-Rev. D, 18-May-09
1
= P
t
2
Document Number: 70718
1.00
DM
3
Z
thJA
thJA
t
t
1
2
(t)
10
= 62.5 °C/W
4
10.00
30
5