SI4966DY-T1-E3 Vishay, SI4966DY-T1-E3 Datasheet - Page 3
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SI4966DY-T1-E3
Manufacturer Part Number
SI4966DY-T1-E3
Description
DUAL N CHANNEL MOSFET, 20V, SOIC
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of SI4966DY-T1-E3
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.025Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Drain Current (max)
7.1A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Power Dissipation
2W
Transistor Polarity
N Channel
Continuous Drain Current Id
7.1A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
25mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4966DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70718
S09-0869-Rev. D, 18-May-09
0.10
0.08
0.06
0.04
0.02
0.00
40
30
20
10
0
5
4
3
2
1
0
0.0
0
0
V
I
D
0.5
DS
= 7.1 A
On-Resistance vs. Drain Current
= 10 V
5
V
1.0
DS
V
10
GS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
I
= 5 V thru 3 V
V
D
- Total Gate Charge (nC)
1.5
GS
- Drain Current (A)
Gate Charge
10
= 2.5 V
2.0
20
15
2.5
V
GS
3.0
30
= 4.5 V
20
1 V, 1.5 V
2.5 V
3.5
2 V
4.0
25
40
4000
3200
2400
1600
800
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
0
- 50
0.0
0
C
V
I
On-Resistance vs. Junction Temperature
D
rss
GS
- 25
= 7.1 A
= 4.5 V
0.5
4
V
V
DS
GS
Transfer Characteristics
0
T
J
- Drain-to-Source Voltage (V)
C
C
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
1.0
iss
oss
25 °C
25
T
Capacitance
C
8
= 125 °C
1.5
50
Vishay Siliconix
12
75
Si4966DY
2.0
- 55 °C
100
www.vishay.com
16
2.5
125
150
3.0
20
3