SI4966DY-T1-E3 Vishay, SI4966DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4966DY-T1-E3
• Description: DUAL N CHANNEL MOSFET, 20V, SOIC
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4966DY-T1-E3

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.025Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 7.1A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Power Dissipation: 2W
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70718
S09-0869-Rev. D, 18-May-09
0.10
0.08
0.06
0.04
0.02
0.00
40
30
20
10
0
5
4
3
2
1
0
0.0
0
0
V
I
D
0.5
DS
= 7.1 A
On-Resistance vs. Drain Current
= 10 V
5
V
1.0
DS
V
10
GS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
I
= 5 V thru 3 V
V
D
- Total Gate Charge (nC)
1.5
GS
- Drain Current (A)
Gate Charge
10
= 2.5 V
2.0
20
15
2.5
V
GS
3.0
30
= 4.5 V
20
1 V, 1.5 V
2.5 V
3.5
2 V
4.0
25
40
4000
3200
2400
1600
800
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
0
- 50
0.0
0
C
V
I
On-Resistance vs. Junction Temperature
D
rss
GS
- 25
= 7.1 A
= 4.5 V
0.5
4
V
V
DS
GS
Transfer Characteristics
0
T
J
- Drain-to-Source Voltage (V)
C
C
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
1.0
iss
oss
25 °C
25
T
Capacitance
C
8
= 125 °C
1.5
50
Vishay Siliconix
12
75
Si4966DY
2.0
- 55 °C
100
www.vishay.com
16
2.5
125
150
3.0
20
3