MT48LC64M8A2TG-7E:C TR Micron Technology Inc, MT48LC64M8A2TG-7E:C TR Datasheet - Page 63
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MT48LC64M8A2TG-7E:C TR
Manufacturer Part Number
MT48LC64M8A2TG-7E:C TR
Description
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet
1.MT48LC64M8A2TG-7EC_TR.pdf
(68 pages)
Specifications of MT48LC64M8A2TG-7E:C TR
Organization
64Mx8
Density
512Mb
Address Bus
15b
Access Time (max)
5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
125mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Not Compliant
Figure 47:
PDF: 09005aef809bf8f3/Source: 09005aef80818a4a
512MbSDRAM.fm - Rev. L 10/07 EN
DQML, DQMU
COMMAND
BA0, BA1
A11, A12
A0–A9,
DQM/
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
Single WRITE – Without Auto Precharge
ACTIVE
T0
ROW
ROW
BANK
t CKH
t CMH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
NOP
1. For this example, BL = 1, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 14ns to 15ns is required between <D
3. x16: A11 and A12 = “Don’t Care”; x8: A12 = “Don’t Care.”
4. PRECHARGE command not allowed else
DISABLE AUTO PRECHARGE
quency.
t CMS
t CL
t DS
COLUMN m 2
WRITE
T2
BANK
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
IN
T4
NOP
m + 2
t DH
63
t DS
D
IN
IN
T5
NOP
m + 3
m> and the PRECHARGE command, regardless of fre-
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DH
t
RAS would be violated.
t
WR
T6
NOP
3
512Mb: x4, x8, x16 SDRAM
PRECHARGE
SINGLE BANK
ALL BANKs
T7
BANK
©2000 Micron Technology, Inc. All rights reserved.
t RP
Timing Diagrams
NOP
T8
ACTIVE
ROW
ROW
BANK
T9
Don’t Care