STH180N10F3-2 STMicroelectronics, STH180N10F3-2 Datasheet - Page 15

• Manufacturer Part Number: STH180N10F3-2
• Description: MOSFET N-CH 100V 180A H2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STH180N10F3-2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 114.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 6665pF @ 25V
• Power - Max: 315W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11216-2

STH180N10F3-2, STP180N10F3
5
Revision history
Table 10.
01-Aug-2008
10-Mar-2011
03-Jun-2010
Date
Document revision history
Revision
1
2
3
Doc ID 14933 Rev 3
First version
Document status promoted from preliminary data to datasheet.
– Removed package, mechanical data: D²PAK
– Added new package mechanical data: H²PAK
Changes
Revision history
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