STH180N10F3-2 STMicroelectronics, STH180N10F3-2 Datasheet - Page 9
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STH180N10F3-2
Manufacturer Part Number
STH180N10F3-2
Description
MOSFET N-CH 100V 180A H2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STH180N10F3-2.pdf
(16 pages)
Specifications of STH180N10F3-2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
180A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
114.6nC @ 10V
Input Capacitance (ciss) @ Vds
6665pF @ 25V
Power - Max
315W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11216-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STH180N10F3-2
Manufacturer:
STMicroelectronics
Quantity:
62
STH180N10F3-2, STP180N10F3
3
Figure 16. Switching times test circuit for
Figure 18. Test circuit for inductive load
Figure 20. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
Doc ID 14933 Rev 3
1000
μF
AM01472v1
AM01468v1
AM01470v1
V
DD
V
DD
V
DD
Figure 17. Gate charge test circuit
Figure 19. Unclamped inductive load test
Figure 21. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
μF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
μF
100nF
90%
td
off
t
off
Test circuits
3.3
μF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
9/16
G
DD
DD