STH180N10F3-2 STMicroelectronics, STH180N10F3-2 Datasheet - Page 6

• Manufacturer Part Number: STH180N10F3-2
• Description: MOSFET N-CH 100V 180A H2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STH180N10F3-2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 114.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 6665pF @ 25V
• Power - Max: 315W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11216-2

Electrical characteristics
2.1
6/16
Figure 2.
Figure 4.
Figure 6.
100
100
0.1
0.1
(A)
(A)
10
10
I
I
I
D
D
D
1
1
300
350
100
250
200
150
0.1
0.1
(A)
50
0
0
Electrical characteristics (curves)
Safe operating area for TO-220
Safe operating area for H²PAK
Output characteristics
V
1
GS
=10V
2
1
1
Tc=25°C
Tc=25°C
Tj=175°C
Single pulse
Tj=175°C
Single pulse
3
4
7V
5
10
10
6
7
V
V
DS
DS
8
(V)
(V)
5V
Doc ID 14933 Rev 3
100µs
100µs
1ms
10ms
1ms
10ms
AM08615v1
AM08625v1
AM08616v1
V
6V
DS
(V)
Figure 3.
Figure 5.
Figure 7.
10
10
10
10
I
10
10
D
K
K
350
250
150
100
300
200
-2
-2
-1
-1
(A)
50
-5
-5
0
0.1
0.1
δ=0.5
δ=0.5
0
Single pulse
Single pulse
0.2
0.2
Thermal impedance for TO-220
Thermal impedance for H²PAK
Transfer characteristics
10
10
1
-4
-4
0.01
0.01
2
STH180N10F3-2, STP180N10F3
3
10
10
-3
-3
V
0.02
0.02
4
DS
=2V
5
10
10
0.05
0.05
Zth=k Rthj-c
Zth=k Rthj-c
-2
-2
6
δ=tp/τ
δ=tp/τ
tp
tp
τ
τ
7
10
10
-1
-1
8
280tok
280tok
t
t
p
p
9
(s)
(s)
AM08617v1
V
GS
(V)