STH180N10F3-2 STMicroelectronics, STH180N10F3-2 Datasheet - Page 4

• Manufacturer Part Number: STH180N10F3-2
• Description: MOSFET N-CH 100V 180A H2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STH180N10F3-2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 114.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 6665pF @ 25V
• Power - Max: 315W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11216-2

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 4.
Table 5.
Table 6.
V
Symbol
Symbol
Symbol
CASE
R
V
(BR)DSS
t
t
I
C
I
GS(th)
DS(on)
C
C
Q
Q
d(on)
d(off)
DSS
GSS
Q
oss
t
t
rss
iss
gs
gd
r
f
g
= 25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
Doc ID 14933 Rev 3
I
V
V
V
V
V
H²PAK
TO-220
V
V
V
V
(see
V
R
(see
Figure
D
GS
GS
DS
GS
DD
GS
DD
DS
DS
DS
G
= 250 µA, V
= 4.7 Ω V
= max rating,
= max rating,@125°C
= V
= 10 V, I
Test conditions
= ±20 V
Test conditions
= 25 V, f = 1 MHz,
= 0
= 10 V
Test conditions
= 50 V, I
= 50 V, I
Figure
Figure
21)
GS
, I
D
17)
16,
D
D
D
GS
= 250 µA
= 60 A
GS
= 120 A,
= 60 A
= 10 V
= 0
STH180N10F3-2, STP180N10F3
Min.
Min.
Min.
100
2
-
-
-
114.6
6665
Typ.
Typ.
38.8
31.9
Typ.
25.6
97.1
99.9
786
3.9
4.5
6.9
49
Max.
Max.
Max.
±
100
4.5
5.1
200
10
4
-
-
-
Unit
Unit
Unit
mΩ
mΩ
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
V
V