STH260N6F6-2 STMicroelectronics, STH260N6F6-2 Datasheet - Page 3

• Manufacturer Part Number: STH260N6F6-2
• Description: MOSFET N-CH 75V 180A H2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STH260N6F6-2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 300W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11217-2

STH260N6F6-2, STP260N6F6
1
Electrical ratings
Table 2.
1. Current limited by package.
2. Starting T
Table 3.
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
R
Symbol
R
Symbol
E
thj-pcb
I
R
thj-case
DM
P
V
V
AS
T
thj-a
T
TOT
I
I
T
DS
GS
stg
D
D
l
j
(1)
(2)
(1)
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
j
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Single pulse avalanche energy
Storage temperature
Operating junction temperature
= 25 °C, I
Absolute maximum ratings
Thermal data
D
= 35 A, V
Parameter
Parameter
DD
C
= 50 V.
Doc ID 17467 Rev 1
= 25 °C
GS
= 0)
C
C
= 25 °C
= 100 °C
TO-220
TO-220
62.5
120
134
480
1
– 55 to 175
Value
Value
± 20
TBD
300
300
0.5
75
Electrical ratings
H
H
2
2
PAK-2
PAK-2
180
170
720
0.8
35
°C/W
°C/W
°C/W
Unit
W/°C
Unit
°C
mJ
°C
W
V
V
A
A
A
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