STH260N6F6-2 STMicroelectronics, STH260N6F6-2 Datasheet - Page 5

• Manufacturer Part Number: STH260N6F6-2
• Description: MOSFET N-CH 75V 180A H2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STH260N6F6-2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 300W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11217-2

STH260N6F6-2, STP260N6F6
Table 7.
1. Current limited by package.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 17467 Rev 1
For TO-220
For H
TO-220
H
For TO-220
I
For H
I
I
di/dt = 100 A/µs,
T
(see Figure 4)
SD
SD
SD
j
2
= 150 °C
PAK-2
Test conditions
= 120 A, V
= 180 A, V
= 120 A, V
2
2
PAK-2
PAK-2
GS
GS
DD
= 60 V
= 0
= 0
Electrical characteristics
Min.
-
-
-
-
-
-
Typ.
TBD
TBD
TBD
Max
TBD
120
180
480
720
Unit
nC
ns
A
A
A
A
V
A
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