STH260N6F6-2 STMicroelectronics, STH260N6F6-2 Datasheet - Page 8
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STH260N6F6-2
Manufacturer Part Number
STH260N6F6-2
Description
MOSFET N-CH 75V 180A H2PAK
Manufacturer
STMicroelectronics
Series
STripFET™ DeepGATE™r
Datasheet
1.STH260N6F6-2.pdf
(12 pages)
Specifications of STH260N6F6-2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
180A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
10500pF @ 25V
Power - Max
300W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11217-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Package mechanical data
8/12
Table 8.
Figure 8.
Dim.
A1
H1
L1
L2
L3
L4
M
A
C
E
F
H
R
V
e
L
H²PAK 2 leads mechanical data
H²PAK 2 leads drawing
L3
H1
10.00
7.171
15.30
H
e
Min.
4.30
0.03
1.17
4.98
0.50
0.78
1.27
4.93
7.45
0.20
1.5
2.6
0°
F (x2)
Doc ID 17467 Rev 1
Typ.
mm
A1
STH260N6F6-2, STP260N6F6
A
E
0.25 Gouge Plane
C
10.40
7.971
15.80
Max.
4.80
0.20
1.37
5.18
0.90
0.85
1.40
5.23
7.85
0.60
1.7
2.9
8°
8159712_B