STH260N6F6-2 STMicroelectronics, STH260N6F6-2 Datasheet - Page 4

• Manufacturer Part Number: STH260N6F6-2
• Description: MOSFET N-CH 75V 180A H2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STH260N6F6-2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 300W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11217-2

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
t
t
C
I
I
DS(on)
C
GS(th)
C
Q
Q
d(on)
d(off)
DSS
GSS
Q
t
oss
t
rss
iss
gs
gd
r
f
g
= 25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 17467 Rev 1
I
V
V
V
V
For H
V
For TO-220
V
D
V
R
(see Figure 2)
V
V
V
V
(see Figure 3)
GS
GS
GS
DS
DS
DS
DD
DS
GS
DD
GS
G
= 250 µA, V
= max rating,T
= 4.7 Ω V
= max rating
= V
= ± 20 V
= 10 V, I
= 10 V, I
2
= 25 V, f = 1 MHz,
= 0
= 10 V
= 30 V, I
= 30 V, I
Test conditions
Test conditions
PAK-2
Test conditions
GS
, I
D
D
D
D
D
GS
GS
= 250 µA
= 90 A
= 60 A
= 60 A
= 120 A,
= 10 V
= 0
C
=125 °C
STH260N6F6-2, STP260N6F6
Min.
Min.
Min.
60
2
-
-
-
-
10500
Typ.
Typ.
TBD
TBD
TBD
TBD
Typ.
TBD
TBD
780
1.6
2.4
440
150
Max.
Max.
Max.
100
100
-
-
1
-
-
4
2
3
Unit
Unit
Unit
pF
pF
nC
nC
nC
mΩ
pF
ns
ns
ns
ns
µA
µA
nA
V
V