ICS8534BMI-13LFT IDT, Integrated Device Technology Inc, ICS8534BMI-13LFT Datasheet
ICS8534BMI-13LFT
Specifications of ICS8534BMI-13LFT
Related parts for ICS8534BMI-13LFT
ICS8534BMI-13LFT Summary of contents
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... Available in both standard (RoHS 5) and lead-free RoHS 6) packages P IN CLK_EN XTAL_IN XTAL_OUT V CC CLK LVPECL CLK_SEL Q0 V nQ0 V _ CCO LVPECL ICS8534I-13 LVCMOS 16-Lead SOIC, 150MIL Q1 3.9mm x 9.9mm x 1.375mm PRELIMINARY ICS8534I-13 A SSIGNMENT CCO LVCMOS nQ0 package body M Package Top View ICS8534BMI-13 REV. B MAY 16, 2008 ...
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... ICS8534I-13 1-TO-4, CRYSTAL OSCILLATOR/LVCMOS-TO-3.3V LVPECL/LVCMOS FANOUT BUFFER ABLE IN ESCRIPTIONS ABLE IN HARACTERISTICS IDT ™ / ICS ™ 3.3V LVPECL/LVCMOS FANOUT BUFFER ICS8534BMI-13 REV. B MAY 16, 2008 PRELIMINARY ...
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... CRYSTAL OSCILLATOR/LVCMOS-TO-3.3V LVPECL/LVCMOS FANOUT BUFFER T 3A ABLE ONTROL NPUT UNCTION Disabled CLK CLK_EN nQ0 Q0: ABLE LOCK NPUT UNCTION ABLE IDT ™ / ICS ™ 3.3V LVPECL/LVCMOS FANOUT BUFFER ABLE CLK_EN T D IGURE IMING IAGRAM PRELIMINARY Enabled ICS8534BMI-13 REV. B MAY 16, 2008 ...
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... CCO_LVCMOS + 0.5V those listed in the DC Characteristics or AC Characteristics is not CC implied. Exposure to absolute maximum rating conditions for ex- tended periods may affect product reliability 3.3V±5%, T HARACTERISTICS CC CCO_LVPECL 2.5V±5%, T HARACTERISTICS CC CCO_LVCMOS PRELIMINARY = -40°C 85° -40°C 85° ICS8534BMI-13 REV. B MAY 16, 2008 ...
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... LVCMOS / LVTTL DC C ABLE " 4D. LVPECL DC C ABLE HARACTERISTICS ABLE RYSTAL HARACTERISTICS IDT ™ / ICS ™ 3.3V LVPECL/LVCMOS FANOUT BUFFER , 2.5V±5%, T HARACTERISTICS CC CCO_LVCMOS 3.3V±5 3.3V±5 CCO_LVPECL -40°C 85° " -40°C 85° ICS8534BMI-13 REV. B MAY 16, 2008 PRELIMINARY µ A µ A µ A µ ...
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... ICS8534I-13 1-TO-4, CRYSTAL OSCILLATOR/LVCMOS-TO-3.3V LVPECL/LVCMOS FANOUT BUFFER T 6A ABLE HARACTERISTICS ƒ 6B ABLE HARACTERISTICS ƒ IDT ™ / ICS ™ 3.3V LVPECL/LVCMOS FANOUT BUFFER = 3.3V±5 -40°C 85° CCO_LVPECL 2.5V±5 -40° CCO_LVCMOS 85° ICS8534BMI-13 REV. B MAY 16, 2008 PRELIMINARY ...
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... ARRIER REQUENCY device. This is illustrated above. The device meets the noise floor of what is shown, but can actually be lower. The phase noise is dependant on the input source and measurement equipment. 7 PRELIMINARY Additive Phase Jitter @ 155.52MHz (12kHz to 20MHz) = 0.16ps typical ) Z ICS8534BMI-13 REV. B MAY 16, 2008 ...
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... ICS ™ 3.3V LVPECL/LVCMOS FANOUT BUFFER M EASUREMENT 1.25V±5% SCOPE CCO_LVCMOS LVCMOS nQx GND -1.25V±5% C 2.5V LVCMOS O IRCUIT CLK Q1:Q3 LVCMOS LVCMOS O 8 PRELIMINARY I NFORMATION SCOPE UTPUT OAD EST IRCUIT CCO_LVCMOS ROPAGATION ELAY tsk(o) S UTPUT KEW ICS8534BMI-13 REV. B MAY 16, 2008 ...
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... ALL IME IDT ™ / ICS ™ 3.3V LVPECL/LVCMOS FANOUT BUFFER Q1:Q3 x 100 LVCMOS O IDTH ERIOD 80 20% Q1: LVCMOS O 9 PRELIMINARY V CCO_LVCMOS PERIOD t PW odc = x 100% t PERIOD UTPUT UTY YCLE ULSE IDTH ERIOD 80% 80% 20 UTPUT ISE ALL IME ICS8534BMI-13 REV. B MAY 16, 2008 20% ...
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... The optimum C1 and C2 values can be slightly adjusted for different board layouts. XTAL_OUT C1 27p X1 XTAL_IN C2 27p IGURE RYSTAL NPU NTERFACE 10 PRELIMINARY : UTPUTS UTPUT ICS8534BMI-13 REV. B MAY 16, 2008 ...
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... FIN FOUT RTT T ERMINATION 11 PRELIMINARY .1uf XTAL_IN XTAL_OUT XTAL I I NPUT NTERFACE 3.3V 125 125 FIN 4B. LVPECL O T IGURE UTPUT ERMINATION ICS8534BMI-13 REV. B MAY 16, 2008 applications, R1 ...
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... OWER ONSIDERATIONS = 3. 3.465V, which gives worst case results 3.465V * 60mA = 207.9mW to V CCO_LVCMOS / [ 2.625V / [2 * (50 OUT per LVCMOS output = 15 * (20.2mA 6.12mW per output OUT 15pF * 25MHz * (2.625V) DDO ) + Total Power (25MHz) OUT 12 PRELIMINARY / 20.2mA 2 = 2.58mW per output ICS8534BMI-13 REV. B MAY 16, 2008 ...
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... Multi-Layer PCB, JEDEC Standard Test Boards IDT ™ / ICS ™ 3.3V LVPECL/LVCMOS FANOUT BUFFER TM devices is 125°C. * Pd_total + 16- SOIC PIN ORCED ONVECTION by Velocity (Linear Feet per Minute 90°C/W 13 PRELIMINARY must be used. Assuming no air JA 200 500 82°C/W 78°C/W ICS8534BMI-13 REV. B MAY 16, 2008 ...
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... Multi-Layer PCB, JEDEC Standard Test Boards T C RANSISTOR OUNT The transistor count for ICS8534I-13 is: 550 IDT ™ / ICS ™ 3.3V LVPECL/LVCMOS FANOUT BUFFER R I ELIABILITY NFORMATION 16 L SOIC EAD by Velocity (Linear Feet per Minute 90°C/W 14 PRELIMINARY 200 500 82°C/W 78°C/W ICS8534BMI-13 REV. B MAY 16, 2008 ...
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... ICS8534I-13 1-TO-4, CRYSTAL OSCILLATOR/LVCMOS-TO-3.3V LVPECL/LVCMOS FANOUT BUFFER ACKAGE UTLINE UFFIX FOR IDT ™ / ICS ™ 3.3V LVPECL/LVCMOS FANOUT BUFFER SOIC EAD ABLE ACKAGE IMENSIONS ° 0 Reference Document: JEDEC Publication 95, MS-012 15 PRELIMINARY ° 8 ICS8534BMI-13 REV. B MAY 16, 2008 ...
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... IDT does not authorize or warrant any IDT product for use in life support devices or critical medical instruments. IDT ™ / ICS ™ 3.3V LVPECL/LVCMOS FANOUT BUFFER " " " " " " PRELIMINARY ° & ° ° & ° ICS8534BMI-13 REV. B MAY 16, 2008 ° ° ° ° ...
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ICS8534I-13 1-TO-4, CRYSTAL OSCILLATOR/LVCMOS-TO-3.3V LVPECL/LVCMOS FANOUT BUFFER Innovate with IDT and accelerate your future networks. Contact: www.IDT.com For Sales 800-345-7015 (inside USA) +408-284-8200 (outside USA) Fax: 408-284-2775 www.IDT.com/go/contactIDT © 2008 Integrated Device Technology, Inc. All rights reserved. Product specifications subject ...