ADF4213BCP Analog Devices Inc, ADF4213BCP Datasheet - Page 2

• Manufacturer Part Number: ADF4213BCP
• Description: IC PLL FREQ SYNTHESIZER 20-LFCSP
• Manufacturer: Analog Devices Inc
• Type: Clock/Frequency Synthesizer (RF/IF)r

Specifications of ADF4213BCP

• Rohs Status: RoHS non-compliant
• Pll: Yes
• Input: CMOS
• Output: Clock
• Number Of Circuits: 1
• Ratio - Input:output: 3:1
• Differential - Input:output: Yes/No
• Frequency - Max: 3GHz
• Divider/multiplier: No/No
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-LFCSP
• Frequency-max: 3GHz

ADF4210/ADF4211/ADF4212/ADF4213–SPECIFICATIONS
P
RF/IF CHARACTERISTICS (3 V)
RF/IF CHARACTERISTICS (5 V)
REFIN CHARACTERISTICS
PHASE DETECTOR
CHARGE PUMP
LOGIC INPUTS
LOGIC OUTPUTS
(V
T
A
arameter
DD
= T
RF Input Frequency (RF
RF Input Sensitivity
IF Input Frequency (IF
IF Input Sensitivity
Maximum Allowable
Prescaler Output Frequency
RF Input Frequency (RF
RF Input Sensitivity
IF Input Frequency (IF
IF Input Sensitivity
Maximum Allowable
Prescaler Output Frequency
REFIN Input Frequency
REFIN Input Sensitivity
REFIN Input Capacitance
REFIN Input Current
Phase Detector Frequency
I
I
Sink and Source Current Matching
I
I
V
V
I
C
V
V
CP
CP
CP
CP
INH
1 = V
INH
INL
OH
OL
IN
ADF4210
ADF4211
ADF4212
ADF4213
ADF4210
ADF4211
ADF4212
ADF4213
ADF4210
ADF4211
ADF4212
ADF4213
ADF4210
ADF4211
ADF4212
ADF4213
High Value
Low Value
Absolute Accuracy
R
MIN
Sink/Source
Three-State Leakage Current
vs. V
vs. Temperature
, Input Capacitance
, Output Low Voltage
/I
SET
, Output High Voltage
, Input Low Voltage
, Input High Voltage
INL
to T
DD
Range
, Input Current
2 = 3 V
CP
MAX
unless otherwise noted.)
10%, 5 V
IN
IN
4
IN
IN
)
)
5
)
)
3
3
10%; V
DD
1, V
B Version
0.1/1.2
0.1/2.0
0.15/2.7
0.2/3.0
–10/0
60/550
60/550
0.06/1.0
0.06/1.0
–10/0
165
0.18/1.2
0.18/2.0
0.2/2.3
0.2/2.5
–5/0
100/550
100/550
0.1/1.0
0.1/1.0
–5/0
200
0/115
–5/0
10
± 100
55
5
625
3
1.5/5.6
1
2
2
2
0.8 × DV
0.2 × DV
± 1
10
DV
0.4
DD
2 ≤ V
DD
– 0.4
P
1, V
DD
DD
P
2 ≤ 6.0 V ; AGND
B Chips
0.1/1.2
0.1/2.0
0.15/2.7
0.2/3.0
–10/0
60/550
60/550
0.06/1.0
0.06/1.0
–10/0
165
0.18/1.2
0.18/2.0
0.2/2.3
0.2/2.5
–5/0
100/550
100/550
0.1/1.0
0.1/1.0
–5/0
200
0/115
–5/0
10
± 100
55
5
625
3
1.5/5.6
1
2
2
2
0.8 × DV
0.2 × DV
± 1
10
DV
0.4
DD
– 0.4
2
DD
DD
RF
= DGND
Unit
GHz min/max
GHz min/max
GHz min/max
GHz min/max
dBm min/max
MHz min/max
MHz min/max
GHz min/max
GHz min/max
dBm min/max
MHz max
GHz min/max
GHz min/max
GHz min/max
GHz min/max
dBm min/max
MHz min/max
MHz min/max
GHz min/max
GHz min/max
dBm min/max
MHz max
MHz min/max For F < 5 MHz, use dc-coupled square wave
dBm min/max
pF max
µA max
MHz max
mA typ
µA typ
% typ
kΩ, min/max
nA typ
% typ
% typ
% typ
V min
V max
µA max
pF max
V min
V max
RF
= AGND
IF
Use a square wave for frequencies lower than F
Use a square wave for frequencies lower than F
Test Conditions/Comments
See Figure 3 for Input Circuit.
See Figure 3 for Input Circuit.
See Figure 2 for Input Circuit.
(0 to V
AC-Coupled. When dc-coupled, 0 to V
(CMOS-Compatible)
Programmable: See Table V
With R
With R
0.5 V
0.5 V
V
I
I
= DGND
OH
OL
CP
= 500 µA
= 500 µA
= V
DD
SET
SET
IF
P
V
V
/2
= 0 V; R
).
CP
CP
= 2.7 kΩ
= 2.7 kΩ
V
V
P
P
SET
– 0.5 V
– 0.5 V
= 2.7 k
1
dBm to 50
DD
max
;
MIN
MIN
.
.