K4S561632J-UC60000 Samsung Semiconductor, K4S561632J-UC60000 Datasheet - Page 8

• Manufacturer Part Number: K4S561632J-UC60000
• Manufacturer: Samsung Semiconductor
• Type: SDRAMr

Specifications of K4S561632J-UC60000

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 120mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4S560432J
K4S560832J
K4S561632J
Note :
Recommended operating conditions (Voltage referenced to V
Notes :
8.0 Absolute Maximum Ratings
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
9.0 DC Operating Conditions
10.0 Capacitance
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
(x4 : DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V ≤ V
Parameter
0
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
~ DQ
IH
IL
DD
Parameter
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
supply relative to V
3
), (x8 : DQ
IN
0
~ DQ
≤ V
SS
Pin
DDQ
7
SS
V
), (x16 : DQ
Symbol
DD
.
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
0
~ DQ
V
15
V
Symbol
Min
-0.3
DD
-10
3.0
2.0
2.4
IN
)
T
-
, V
I
, V
P
STG
OS
D
OUT
DDQ
SS
8 of 15
= 0V, T
Symbol
A
Typ
C
C
3.3
3.0
C
= 0 to 70°C)
C
0
-
-
-
CLK
ADD
OUT
IN
(V
DD
= 3.3V, T
V
DD
Max
-55 ~ +150
3.6
0.8
0.4
-1.0 ~ 4.6
-1.0 ~ 4.6
10
-
+0.3
Min
2.5
2.5
2.5
4.0
Value
50
A
1
= 23°C, f = 1MHz, V
Synchronous DRAM
Rev. 1.22 August 2008
Unit
uA
V
V
V
V
V
Max
3.5
3.8
3.8
6.0
REF
=1.4V ± 200 mV)
I
I
OH
OL
Unit
mA
°C
W
V
V
Note
= -2mA
= 2mA
1
2
3
Unit
pF
pF
pF
pF