IS66WVE4M16BLL-70BLI ISSI, Integrated Silicon Solution Inc, IS66WVE4M16BLL-70BLI Datasheet - Page 11

• Manufacturer Part Number: IS66WVE4M16BLL-70BLI
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS66WVE4M16BLL-70BLI

• Lead Free Status / Rohs Status: Compliant

Rev.00C | March 2010
Low-Power Feature
Standby Mode Operation
Temperature Compensated Refresh
During standby, the device current consumption is reduced to the level necessary to
perform the DRAM refresh operation. Standby operation occurs when CE# and ZZ# are HIGH.
The device will enter a reduced power state upon completion of a READ or WRITE
operations when the address and control inputs remain static for an extended period of time.
This mode will continue until a change occurs to the address or control inputs.
Temperature compensated refresh (TCR) is used to adjust the refresh rate depending on the
device operating temperature. DRAM technology requires more frequent refresh operations to
maintain data integrity as temperatures increase. More frequent refresh is required due to the
increased leakage of the DRAM's capacitive storage elements as temperatures rise. A decreased
refresh rate at lower temperatures will result in a savings in standby current.
TCR allows for adequate refresh at four different temperature thresholds: +15°C, +45°C, +70°C,
and +85°C. The setting selected must be for a temperature higher than the case temperature of
the device. If the case temperature is +50°C, the system can minimize self refresh current
consumption by selecting the +70°C setting. The +15°C and +45°C settings would result in
inadequate refreshing and cause data corruption.
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