IS66WVE4M16BLL-70BLI ISSI, Integrated Silicon Solution Inc, IS66WVE4M16BLL-70BLI Datasheet - Page 20
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IS66WVE4M16BLL-70BLI
Manufacturer Part Number
IS66WVE4M16BLL-70BLI
Description
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS66WVE4M16BLL-70BLI.pdf
(30 pages)
Specifications of IS66WVE4M16BLL-70BLI
Lead Free Status / Rohs Status
Compliant
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Rev.00C | March 2010
AC Characteristics
Table 8 . Asynchronous READ Cycle Timing Requirements
Symbol
Notes:
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
BHZ
CEM
OHZ
APA
OLZ
BLZ
OH
AA
BA
CO
HZ
OE
PC
RC
LZ
2. High-Z to Low-Z timings are tested with the circuit shown in Figure 9. The Low-Z timings
3. Page mode enable only.
1. Low-Z to High-Z timings are tested with the circuit shown in Figure 9. The High-Z timings
Address Acess Time
Page access Time
LB# /UB# access Time
LB#/UB# disable to High-Z output
LB#/UB# enable to Low-Z output
Maximum CE# pulse width
Chip select access time
Chip disable to High-Z output
Chip enable to Low-Z output
Output enable to valid output
Output hold from address change
Output disable to High-Z output
Output enable to Low-Z output
Page cycle time
Read cycle time
measure a 100mV transition from either VOH or VOL toward VDDQ/2.
measure a 100mV transition away from the High-Z (VDDQ/2) level toward either VOH or VOL.
Parameter
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- SRAM@issi.com
Min
10
10
20
70
5
3
-70
Max
70
20
70
70
20
8
8
8
8
Unit
ns
ns
ns
ns
ns
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
IS66WVE4M16BLL
Advanced Information
Notes
1
2
3
1
2
1
2
20