MT4JTF12864AZ-1G4D1 Micron Technology Inc, MT4JTF12864AZ-1G4D1 Datasheet - Page 13

• Manufacturer Part Number: MT4JTF12864AZ-1G4D1
• Description: MOD DDR3 SDRAM 1GB 240UDIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT4JTF12864AZ-1G4D1

• Main Category: DRAM Module
• Sub-category: DDR3 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 64b
• Organization: 128Mx64
• Total Density: 1GByte
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Operating Current: 1.34A
• Number Of Elements: 4
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Memory Type: DDR3 SDRAM
• Memory Size: 1GB
• Speed: 1333MT/s
• Features: -
• Package / Case: 240-UDIMM
• Lead Free Status / Rohs Status: Compliant

Serial Presence-Detect EEPROM
Table 13: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to V
Table 14: Serial Presence-Detect EEPROM AC Operating Conditions
Serial Presence-Detect Data
PDF: 09005aef83cad6ed
JTF4C64_128x64AZ.pdf – Rev. A 10/09
Parameter/Condition
Supply voltage
Input low voltage: Logic 0; All inputs
Input high voltage: Logic 1; All inputs
Output low voltage: I
Input leakage current: V
Output leakage current: V
Parameter/Condition
Clock frequency
Clock pulse width high time
Clock pulse width low time
SDA rise time
SDA fall time
Data-in setup time
Data-in hold time
Data-out hold time
Data out access time from SCL low
Start condition setup time
Start condition hold time
Stop condition setup time
Time the bus must be free before a new transition can start
WRITE time
OUT
Notes:
IN
= 3mA
OUT
= GND to V
DDSPD
For the latest serial presence-detect data, refer to Micron's SPD page:
www.micron.com/SPD.
= GND to V
1. Guaranteed by design and characterization, not necessarily tested.
2. To avoid spurious start and stop conditions, a minimum delay is placed between the fall-
3. For a restart condition, or following a WRITE cycle.
ing edge of SCL and the falling or rising edge of SDA.
DD
DD
512MB, 1GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
13
t
t
Symbol
t
t
t
t
HD:DAT
AA:DAT
SU:DAT
HD:STA
t
SU:STA
SU:STO
t
t
HD:DI
HIGH
t
LOW
t
BUF
SCL
t
t
t
W
R
F
Symbol
V
DDSPD
V
V
V
I
I
LO
OL
LI
IH
IL
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Serial Presence-Detect EEPROM
Min
100
200
0.6
1.3
0.2
0.6
0.6
0.6
1.3
10
20
0
–
–
V
DDSPD
Min
–0.6
0.05
3.0
0.1
–
+ 0.7
Max
400
300
300
900
0.9
10
–
–
–
–
–
–
–
–
©2009 Micron Technology, Inc. All rights reserved.
V
V
DDSPD
DDSPD
Max
3.6
0.4
2.0
2.0
Units
+ 0.3
+ 1.0
kHz
ms
µs
µs
µs
ns
ns
µs
ns
µs
µs
µs
µs
µs
Units
Notes
µA
µA
V
V
V
V
1
1
2
3