MT4JTF12864AZ-1G4D1 Micron Technology Inc, MT4JTF12864AZ-1G4D1 Datasheet - Page 9

• Manufacturer Part Number: MT4JTF12864AZ-1G4D1
• Description: MOD DDR3 SDRAM 1GB 240UDIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT4JTF12864AZ-1G4D1

• Main Category: DRAM Module
• Sub-category: DDR3 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 64b
• Organization: 128Mx64
• Total Density: 1GByte
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Operating Current: 1.34A
• Number Of Elements: 4
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Memory Type: DDR3 SDRAM
• Memory Size: 1GB
• Speed: 1333MT/s
• Features: -
• Package / Case: 240-UDIMM
• Lead Free Status / Rohs Status: Compliant

Electrical Specifications
Table 8: Absolute Maximum Ratings
Table 9: Operating Conditions
PDF: 09005aef83cad6ed
JTF4C64_128x64AZ.pdf – Rev. A 10/09
V
V
Symbol
REFDQ(DC)
REFCA(DC)
I
V
I
V
VREF
I
VTT
T
T
V
OZ
Symbol
I
DD
TT
A
I
C
IN
V
, V
DD
OUT
Parameter
V
Input reference voltage command/address
bus
I/O reference voltage DQ bus
Termination reference current from V
Termination reference voltage (DC) – com-
mand/address bus
Input leakage current; Any in-
put 0V ≤ V
put 0V ≤ V
other pins not under test =
0V)
Output leakage current; 0V ≤
V
are disabled; ODT is HIGH
V
or V
test = 0V)
Module ambient operating temperature
DDR3 SDRAM component case operating
temperature
DD
OUT
REF
REFCA
supply voltage
supply leakage current; V
≤ V
Parameter
V
Voltage on any pin relative to V
DD
DDQ
= V
Notes:
IN
IN
supply voltage relative to V
; DQ and ODT
≤ V
≤ 0.95V (All
DD
/2 (All other pins not under
DD
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device’s data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
; V
1. V
2. T
3. For further information, refer to technical note TN-00-08: ”Thermal Applications,” avail-
4. The refresh rate is required to double when 85°C < T
REF
and address signals’ voltage margin and will reduce timing margins.
able on Micron’s Web site.
A
TT
in-
and T
termination voltage in excess of the stated limit will adversely affect the command
REFDQ
C
Address in-
puts, RAS#,
CAS#, WE#,
BA, S#, CKE,
ODT, CK, CK#
DM
DQ, DQS,
DQS#
are simultaneous requirements.
512MB, 1GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
= V
TT
SS
SS
DD
/2
0.49 × V
9
0.49 × V
0.49 × V
1.425
–600
Min
–8
–2
–5
–4
DD
0
0
- 20mV 0.5 × V
DD
DD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Min
–0.4
–0.4
0.5 × V
0.5 × V
Nom
1.5
–
0
0
0
0
–
–
DD
DD
DD
C
0.51 × V
Electrical Specifications
≤ 95°C.
+1.975
+1.975
0.51 × V
0.51 × V
Max
1.575
Max
+600
+70
+85
©2009 Micron Technology, Inc. All rights reserved.
DD
+8
+2
+5
+4
+ 20mV
DD
DD
Units Notes
mA
µA
µA
µA
°C
°C
V
V
V
V
Units
V
V
2, 3, 4
2, 3
1