BCV28T/R NXP Semiconductors, BCV28T/R Datasheet - Page 3

no-image

BCV28T/R

Manufacturer Part Number
BCV28T/R
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCV28T/R

Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage(max)
40V
Emitter-base Voltage (max)
10V
Base-emitter Saturation Voltage (max)
1.5@0.1mA@100mAV
Collector-emitter Saturation Voltage
1@0.1mA@100mAV
Dc Current Gain
4000@1mA@5V
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-89
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2004 Dec 06
V
V
V
I
I
I
P
T
T
T
R
R
C
CM
B
SYMBOL
SYMBOL
stg
j
amb
CBO
CES
EBO
tot
PNP Darlington transistors
th(j-a)
th(j-s)
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
BCV28
BCV48
BCV28
BCV48
PARAMETER
PARAMETER
open emitter
V
open collector
T
3
amb
BE
= 0 V
≤ 25 °C; note 1
CONDITIONS
note 1
CONDITIONS
−65
−65
MIN.
VALUE
BCV28; BCV48
96
16
−40
−80
−30
−60
−10
−500
−800
−100
1.3
+150
150
+150
Product data sheet
MAX.
UNIT
K/W
K/W
V
V
V
V
V
mA
mA
mA
W
°C
°C
°C
2
2
UNIT
.
.

Related parts for BCV28T/R