BCV28T/R NXP Semiconductors, BCV28T/R Datasheet - Page 4

• Manufacturer Part Number: BCV28T/R
• Manufacturer: NXP Semiconductors

Specifications of BCV28T/R

• Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage(max): 40V
• Emitter-base Voltage (max): 10V
• Base-emitter Saturation Voltage (max): 1.5@0.1mA@100mAV
• Collector-emitter Saturation Voltage: 1@0.1mA@100mAV
• Dc Current Gain: 4000@1mA@5V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-89
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
CHARACTERISTICS
T
2004 Dec 06
I
I
h
V
V
V
f
amb
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
BEon
PNP Darlington transistors
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
BCV28
BCV48
BCV28
BCV48
BCV28
BCV48
BCV28
BCV48
BCV28
BCV48
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
E
E
C
C
C
C
C
C
C
C
C
= 0 A; V
= 0 A; V
= 0 A; V
= −1 mA; V
= −10 mA; V
= −100 mA; V
= −500 mA; V
= −100 mA; I
= −100 mA; I
= −10 mA; I
= −30 mA; V
4
CB
CB
BE
CONDITIONS
= −30 V
= −60 V
= −10 V
CE
B
CE
CE
B
B
= −5 mA
CE
CE
= −5 V; see Fig.2
= −0.1 mA
= −0.1 mA
= −5 V; see Fig.2
= −5 V;
= −5 V; see Fig.2
= −5 V; see Fig.2
−
−
−
4 000
2 000
10 000 −
4 000
20 000 −
10 000 −
4 000
2 000
−
−
−
−
MIN.
BCV28; BCV48
−
−
−
−
−
−
−
−
−
−
−
220
TYP.
Product data sheet
−100
−100
−100
−
−
−
−
−
−
−
−
−1
−1.5
−1.4
−
MAX. UNIT
nA
nA
nA
V
V
V
MHz