PF38F5060M0Y0CFB Micron Technology Inc, PF38F5060M0Y0CFB Datasheet - Page 25
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PF38F5060M0Y0CFB
Manufacturer Part Number
PF38F5060M0Y0CFB
Description
Manufacturer
Micron Technology Inc
Datasheet
1.PF38F5060M0Y0CFB.pdf
(102 pages)
Specifications of PF38F5060M0Y0CFB
Operating Supply Voltage (max)
1.95V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / Rohs Status
Compliant
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Numonyx™ Wireless Flash Memory (W18)
Table 12: DC Voltage Characteristics (Sheet 2 of 2)
November 2007
Order Number: 290701-18
Notes:
1.
2.
3.
4.
Symbol
V
V
V
V
ILKOQ
PPLK
LKO
OH
V
V
less.
V
Block erases, programming and lock-bit configurations are inhibited when V
between V
CCQ
IL
PP
can undershoot to –1.0 V for durations of 2 ns or less and V
<= V
Output High
V
V
V
V
= 1.35 V - 1.8V is available on 130 nm devices only.
PP
CC
CC
CCQ
Parameter
Lock-Out
Lock (90nm)
Lock (130nm)
PPLK
Lock
LKOMIN
inhibits erase and program operations. Don’t use V
and V
CCMIN
V
CCQ
, and above V
Min
1.0
0.7
0.9
-
– 0.1
32/64-Mbit
CCMAX
Max
0.4
-
-
-
-
V
CCQ
.
= 1.8 V
V
CCQ
Min
1.0
0.9
-
-
– 0.1
128-Mbit
IH
PPL
can overshoot to V
and V
Max
0.4
-
-
-
-
PPH
CC
outside their valid ranges.
<V
LKO
Unit
, and not guaranteed in the range
V
V
V
V
V
CCQ
+1.0 V for durations of 2 ns or
V
V
I
OH
Test Condition
CC
CCQ
= –100 µA
= V
= V
CC
CCQ
Min
Min
Datasheet
Notes
3
4
25
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