PF38F5060M0Y0CFB Micron Technology Inc, PF38F5060M0Y0CFB Datasheet - Page 42
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PF38F5060M0Y0CFB
Manufacturer Part Number
PF38F5060M0Y0CFB
Description
Manufacturer
Micron Technology Inc
Datasheet
1.PF38F5060M0Y0CFB.pdf
(102 pages)
Specifications of PF38F5060M0Y0CFB
Operating Supply Voltage (max)
1.95V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / Rohs Status
Compliant
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Figure 18: Synchronous Write To Read Operation
7.2
Note:
Table 17: Erase and Program Times (Sheet 1 of 2)
Datasheet
42
Address [A]
Erasing and Suspending
Erase Time
Suspend
Latency
Programming
Program
Time
Enhanced Factory Programming
Data [D/Q ]
Operation
WAIT [T ]
WE# [W]
RST# [P]
OE# [G ]
CE# [E}
ADV#
CLK
W1
Symbol
W2
Erase and Program Times
Specifications are for 130 nm and 90 nm devices unless otherwise stated.
W500
W501
W600
W601
W200
W201
W202
tERS/PB
t
t
t
tPROG/W
tPROG/PB
tPROG/MB
ERS/MB
SUSP/P
SUSP/E
Parameter
W5
W3
W3
(5)
W4
D
4-Kword Parameter Block
32-Kword Main Block
Program Suspend
Erase Suspend
Single Word
4-Kword Parameter Block
32-Kword Main Block
W7
W6
W18
W8
Description
W19
W20
R11
R11
R12
R302
R301
R303
(1)
R104
R104
R306
R106
R3
Notes
2,3
2,3
2,3
2,3
Numonyx™ Wireless Flash Memory (W18)
Numonyx™ Wireless Flash Memory (W18)
R2
Lat ency Count
2
2
2
R4
0.05
Typ
0.3
0.7
0.4
12
5
5
V
PP1
Max
150
2.5
1.8
.23
10
20
4
Order Number: 290701-18
R307
R304
0.25
0.03
0.24
Typ
0.4
5
5
8
Q
V
PP2
November 2007
Max
0.07
130
2.5
0.6
10
20
4
R305
R304
Unit
Q
µs
µs
µs
s
s
s
s
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