ED DDR3 1G PCH9000 Samsung Semiconductor, ED DDR3 1G PCH9000 Datasheet - Page 19

no-image

ED DDR3 1G PCH9000

Manufacturer Part Number
ED DDR3 1G PCH9000
Description
Manufacturer
Samsung Semiconductor
Type
DDR3 SDRAMr
Datasheet

Specifications of ED DDR3 1G PCH9000

Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
20ns
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
160mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
K4B1G04(08/16)46E
9.0 AC & DC Output Measurement Levels
9.1 Single-ended AC & DC Output Levels
[ Table 14 ] Single-ended AC & DC output levels
Note : 1. The swing of +/-0.1 x V
9.2 Differential AC & DC Output Levels
[ Table 15 ] Differential AC & DC output levels
Note : 1. The swing of +/-0.2xV
9.3 Single-ended Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between V
for single ended signals as shown in Table 16 and figure 6.
[ Table 16 ] Single-ended output slew rate definition
Note : Output slew rate is verified by design and characterization, and may not be subject to production test.
[ Table 17 ] Single-ended output slew rate
Description : SR : Slew Rate
Q : Query Output (like in DQ, which stands for Data-in, Query-Output
se : Singe-ended Signals
For Ron = RZQ/7 setting
Single ended output slew rate for rising edge
Single ended output slew rate for falling edge
Single ended output slew rate
V
V
V
V
V
V
V
Symbol
OHdiff
Symbol
OLdiff
OH
OM
and an effective test load of 25
and an effective test load of 25
OL
OH
OL
(DC)
(AC)
(DC)
(AC)
(DC)
(DC)
Parameter
(AC)
Parameter
AC differential output high measurement level (for output SR)
AC differential output low measurement level (for output SR)
Parameter
DC output high measurement level (for IV curve linearity)
DC output mid measurement level (for IV curve linearity)
DC output low measurement level (for IV curve linearity)
AC output high measurement level (for output SR)
AC output low measurement level (for output SR)
Description
DDQ
DDQ
Symbol
SRQse
is based on approximately 50% of the static single ended output high or low swing with a driver impedance of 40
is based on approximately 50% of the static single ended output high or low swing with a driver impedance of 40
to V
to V
TT
TT
=V
=V
Figure 6. Single-ended Output Slew Rate Definition
Min
2.5
DDQ
DDQ
DDR3-800
delta
/2.
/2 at each of the differential outputs.
TFse
V
V
Max
OH
From
OL
5
(AC)
(AC)
Page 19 of 61
Measured
Min
2.5
DDR3-1066
V
V
OH
OL
To
(AC)
(AC)
delta
Max
5
TRse
DDR3-800/1066/1333/1600
DDR3-800/1066/1333/1600
Min
2.5
DDR3-1333
V
V
V
OH(AC)
V
TT
OL(AC)
V
TT
TT
+0.2 x V
-0.2 x V
0.8 x V
0.5 x V
0.2 x V
+ 0.1 x V
- 0.1 x V
Max
5
DDQ
DDQ
DDQ
DDQ
DDQ
1Gb DDR3 SDRAM
DDQ
V
V
DDQ
OH
OH
Defined by
Delta TRse
Rev. 1.0 February 2009
Delta TFse
(AC)-V
(AC)-V
TBD
Min
DDR3-1600
OL
OL
(AC)
(AC)
OL
Max
Units
Units
5
(AC) and V
V
V
V
V
V
V
V
Units
Notes
Notes
V/ns
OH
1
1
1
1
(AC)

Related parts for ED DDR3 1G PCH9000