ED DDR3 1G PCH9000 Samsung Semiconductor, ED DDR3 1G PCH9000 Datasheet - Page 23

• Manufacturer Part Number: ED DDR3 1G PCH9000
• Manufacturer: Samsung Semiconductor
• Type: DDR3 SDRAMr

Specifications of ED DDR3 1G PCH9000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 20ns
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 160mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4B1G04(08/16)46E
9.7.1 Output Drive Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to table 23 and 24.
∆T = T - T(@calibration); ∆V = V
[ Table 23 ] Output Driver Sensitivity Definition
[ Table 24 ] Output Driver Voltage and Temperature Sensitivity
9.8 On-Die Termination (ODT) Levels and I-V Characteristics
On-Die Termination effective resistance RTT is defined by bits A9, A6 and A2 of MR1 register.
ODT is applied to the DQ,DM, DQS/DQS and TDQS,TDQS (x8 devices only) pins.
A functional representation of the on-die termination is shown below. The individual pull-up and pull-down resistors (RTTpu and RTTpd) are defined as
follows :
RTTpu =
RTTpd =
*dR
RONPU@V
RONPD@
RON@V
ON
Speed Bin
dR
dR
dR
dR
dR
dR
dT and dR
ON
ON
ON
ON
ON
ON
dTM
dVM
dTH
dVH
dTL
dVL
OMDC
VOLDC
OHDC
V
DDQ
ON
l Iout l
V
l Iout l
OUT
dV are not subject to production test but are verified by design and characterization
-V
OUT
DDQ
- V
Figure 12. On-Die Termination : Definition of Voltages and Currents
DDQ
0.9 - dR
0.6 - dR
0.6 - dR
On-Die Termination : Definition of Voltages and Currents
under the condition that RTTpd is turned off
under the condition that RTTpu is turned off
(@calibration); V
circuitry
Min
other
RCV,
0
0
0
0
0
0
like
To
...
ON
ON
ON
dTM * |
dTH * |
dTL * |
800/1066/1333
Min
∆T| - dR
∆T| - dR
∆T| - dR
Chip in Termination Mode
DD
RTT
RTT
Ipd
Ipu
Page 23 of 61
ON
ON
ON
= V
dVL * |∆V|
dVH * |∆V|
dVM * |∆V|
Pu
Pd
DDQ
Max
0.15
0.15
0.15
1.5
1.5
1.5
ODT
1.1 + dR
1.1 + dR
1.1 + dR
Min
Iout
Iout=Ipd-Ipu
0
0
0
0
0
0
ON
ON
ON
dTM * |
dTH * |
dTL * |
V
DQ
V
DDQ
SSQ
V
OUT
Max
1600
∆T| + dR
∆T| + dR
∆T| + dR
1Gb DDR3 SDRAM
ON
ON
ON
Rev. 1.0 February 2009
dVH * |∆V|
dVM * |∆V|
dVL * |∆V|
Max
0.13
0.13
0.13
1.5
1.5
1.5
RZQ/7
RZQ/7
RZQ/7
Units
%/mV
%/mV
%/mV
Units
%/°C
%/°C
%/°C