ED DDR3 1G PCH9000 Samsung Semiconductor, ED DDR3 1G PCH9000 Datasheet - Page 52

• Manufacturer Part Number: ED DDR3 1G PCH9000
• Manufacturer: Samsung Semiconductor
• Type: DDR3 SDRAMr

Specifications of ED DDR3 1G PCH9000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 20ns
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 160mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4B1G04(08/16)46E
[ Table 50 ] Derating values DDR3-1333/1600 tIS/tIH-AC/DC based - Alternate AC150 Threshold
[ Table 51 ] Required time t
CMD/
ADD
Slew
V/ns
rate
Slew Rate[V/ns]
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
< 0.5
>2.0
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
∆tIS
-10
-25
75
50
-1
0
0
0
0
4.0 V/ns
∆tIH
-10
-16
-26
-40
-60
50
34
-4
0
Alternate AC150 Threshold -> V
VAC
∆tIS
-10
-25
75
50
-1
above V
0
0
0
0
3.0 V/ns
∆tIH
-10
-16
-26
-40
-60
50
34
-4
0
IH
(AC) {blow V
min
75
57
50
38
34
29
22
13
0
0
∆tIS
-10
-25
75
50
-1
0
0
0
0
2.0 V/ns
t
∆tIS, ∆tIH Derating [ps] AC/DC based
VAC
∆tIH
@175mV [ps]
-10
-16
-26
-40
-60
50
34
-4
0
IH
IL
(AC) = V
(AC)} for valid transition
Page 52 of 61
CLK,CLK Differential Slew Rate
∆tIS
-17
83
58
-2
8
8
8
8
7
1.8 V/ns
REF
(DC) + 150mV, V
∆tIH
max
-18
-32
-52
58
42
-2
-8
8
4
-
-
-
-
-
-
-
-
-
-
∆tIS
91
66
16
16
16
16
15
-9
6
1.6 V/ns
IL
∆tIH
-10
-24
-44
66
50
16
12
(AC) = V
6
0
∆tIS
99
74
24
24
24
24
23
14
-1
REF
1.4V/ns
min
175
170
167
163
162
161
159
155
150
150
(DC) - 150mV
1Gb DDR3 SDRAM
∆tIH
-16
-36
74
58
24
20
14
-2
8
t
VAC
Rev. 1.0 February 2009
@150mV [ps]
∆tIS
107
82
32
32
32
32
31
22
7
1.2V/ns
∆tIH
-26
84
68
34
30
24
18
-6
8
max
∆tIS
115
-
-
-
-
-
-
-
-
-
-
90
40
40
40
40
39
30
15
1.0V/ns
∆tIH
100
-10
84
50
46
40
34
24
10