MT46H32M32LFCM-75 IT:A TR Micron Technology Inc, MT46H32M32LFCM-75 IT:A TR Datasheet - Page 60

• Manufacturer Part Number: MT46H32M32LFCM-75 IT:A TR
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M32LFCM-75 IT:A TR

• Organization: 32Mx32
• Density: 1Gb
• Address Bus: 13b
• Access Time (max): 6.5/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Figure 24: Nonconsecutive READ Bursts
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4, 8, or 16 (if burst is 8 or 16, the second burst interrupts the first).
3. Shown with nominal
4. Example applies when READ commands are issued to different devices or nonconsecu-
tive READs.
OUT
CL = 2
NOP
NOP
T1
T1
n (or b) = data-out from column n (or column b).
CL = 3
T1n
T1n
D
n
OUT
NOP
NOP
T2
1
T2
t
AC,
D
n + 1
OUT
T2n
T2n
60
t
DQSCK, and
D
D
n + 2
READ
Bank,
READ
Bank,
OUT
Col b
Col b
OUT
n
T3
T3
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
n + 1
D
n + 3
T3n
T3n
t
DQSQ.
OUT
OUT
CL = 2
D
n + 2
T4
T4
NOP
NOP
OUT
Don’t Care
CL = 3
D
n + 3
T4n
T4n
OUT
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T5
T5
NOP
NOP
D
OUT
READ Operation
b
Transitioning Data
T5n
T5n
D
b + 1
OUT
T6
T6
NOP
NOP
D
D
b + 2
OUT
OUT
b