IS43DR16640A-25DBLI ISSI, Integrated Silicon Solution Inc, IS43DR16640A-25DBLI Datasheet - Page 18

• Manufacturer Part Number: IS43DR16640A-25DBLI
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: DDR2 SDRAMr

Specifications of IS43DR16640A-25DBLI

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

IS43/46DR81280A, IS43/46DR16640A
ODT DC Electrical Characteristics
Note:
1.
2.
Notes:
1.
2.
3.
4.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00D, 8/17/2010
ODT AC Electrical Characteristics and Operating Conditions
tAONPD ODT turn‐on (Power‐Down Mode)
tAOFPD ODT turn‐off (Power‐Down Mode)
Symbol Parameter/Condition
tAOND
tAOFD
tANPD
tAXPD
tAON
tAOF
Measurement Definition for Rtt(eff):
Apply VIHac and VILac to test pin seperately, then measure current I(VIHac) and I(VILac) respectively
Measurement Defintion for VM:
Measure voltage (VM) at test pin (midpoint) with no load:
ODT turn on time min is when the de vice leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resistance is fully
on. Both are measured from t AOND.
ODT turn off time min is when the device starts to turn‐off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are measured from
tAOFD.
For Standard Active Power‐Down (with MR S A12 = “0”), the non power ‐down timings (tAOND, tAON, tAOFD and tAOF) apply.
tANPD an d tAXPD define the timing limit when either Power Down Mode Timings (tAONPD, tAOFPD) or Non‐Power Down Mode timings ( tAOND, tAOFD) have
to be applied
Rtt effective impedance value for EMRS(A6=1, A2=0); 150 ohm
Rtt effective impedance value for EMRS(A6=0, A2=1); 75 ohm
Rtt effective impedance value for EMRS(A6=A2=1); 50 ohm
ODT turn‐on delay
ODT turn‐on
ODT turn‐off delay
ODT turn‐off
ODT to Power‐Down Mode Entry L:atency
ODT Power Down Exit Latency
Deviation of VM with respect to VDDQ/2
Parameter/Condition
Rtt
Δ
(
eff
VM
)
=
=
⎛
⎜
⎝
( I
VIH
2
VDDQ
VIH
x
tAC(Min)+2 ns
tAC(Min)+2ns
VM
(
AC
(
tAC(Min)
tAC(Min)
AC
))
−
Min.
)
2.5
−
−
1
2
3
8
( I
⎞
⎟
⎠
VIL
x
VIL
100
(
AC
(
AC
Delta VM
%
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
)
Symbol
))
2tCK+tAC(Max)+1ns
Min.
120
2.5tCK+tAC+1ns
tAC(Max)+0.7ns
tAC(Max)+0.6ns
60
40
‐6
Max.
2.5
2
Nom.
150
75
50
Max.
180
90
60
+6
Units
tCK
tCK
tCK
tCK
Units
ohms
ohms
ohms
ns
ns
ns
ns
%
Notes
Notes
1
1
1
2
1
3
2
3
4
4
18