IS43R16320D-6BLI ISSI, Integrated Silicon Solution Inc, IS43R16320D-6BLI Datasheet

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IS43R16320D-6BLI

Manufacturer Part Number
IS43R16320D-6BLI
Description
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS43R16320D-6BLI

Lead Free Status / Rohs Status
Compliant
IS43R86400D
IS43/46R16320D, IS43/46R32160D
16Mx32, 32Mx16, 64Mx8
512Mb DDR SDRAM
FEATURES
• VDD and VDDQ: 2.5V ± 0.2V (-5, -6)
• VDD and VDDQ: 2.5V ± 0.1V (-4)
• SSTL_2 compatible I/O
• Double-data rate architecture; two data transfers
• Bidirectional, data strobe (DQS) is transmitted/
• DQS is edge-aligned with data for READs and
• Differential clock inputs (CK and CK)
• DLL aligns DQ and DQS transitions with CK
• Commands entered on each positive CK edge;
• Four internal banks for concurrent operation
• Data Mask for write data. DM masks write data
• Burst Length: 2, 4 and 8
• Burst Type: Sequential and Interleave mode
• Programmable CAS latency: 2, 2.5 and 3
• Auto Refresh and Self Refresh Modes
• Auto Precharge
OPTIONS
• Die revision: D
• Configuration(s):
• Package(s):
• Lead-free package available
• Temperature Range:
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc.
Rev. 00A
09/14/09
per clock cycle
received with data, to be used in capturing data
at the receiver
centre-aligned with data for WRITEs
transitions
data and data mask referenced to both edges of
DQS
at both rising and falling edges of data strobe
16Mx32
32Mx16
64Mx8
144 Ball BGA (x32)
66-pin TSOP-II (x8, x16) and 60 Ball BGA (x8, x16)
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
Automotive, A1 (-40°C to +85°C)
Automotive, A2 (-40°C to +105°C)
DEVICE OVERVIEW
ISSI’s 512-Mbit DDR SDRAM achieves high speed data
transfer using pipeline architecture and two data word
accesses per clock cycle. The 536,870,912-bit memory
array is internally organized as four banks of 128Mb to
allow concurrent operations. The pipeline allows Read
and Write burst accesses to be virtually continuous, with
the option to concatenate or truncate the bursts. The
programmable features of burst length, burst sequence
and CAS latency enable further advantages. The device
is available in 8-bit, 16-bit and 32-bit data word size
Input data is registered on the I/O pins on both edges
of Data Strobe signal(s), while output data is referenced
to both edges of Data Strobe and both edges of CLK.
Commands are registered on the positive edges of CLK.
An Auto Refresh mode is provided, along with a Self
Refresh mode. All I/Os are SSTL_2 compatible.
ADDRESS TABLE
KEY TIMING PARAMETERS
Parameter
Configuration
Bank Address
Pins
Autoprecharge
Pins
Row Address
Column
Address
Refresh Count
Com./Ind./A1
A2
Speed Grade
F
F
F
ck
ck
ck
Max CL = 3
Max CL = 2.5
Max CL = 2
16M x 32
4M x 32 x 4
banks
BA0, BA1
A8/AP
8K(A0 – A12)
512(A0 – A7,
A9)
8K / 64ms
8K / 16ms
x8, x16
250
167
133
only
-4
ADVANCED INFORMATION
200
167
133
-5
OCTOBER 2009
32M x 16
8M x 16 x 4
banks
BA0, BA1
A10/AP
8K(A0 – A12) 8K(A0 – A12)
1K(A0 – A9)
8K / 64ms
8K / 16ms
167
167
133
-6
64M x 8
16M x 8 x 4
banks
BA0, BA1
A10/AP
2K(A0 – A9,
A11)
8K / 64ms
8K / 16ms
Units
MHz
MHz
MHz
1

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IS43R16320D-6BLI Summary of contents

Page 1

... ADVANCED INFORMATION OCTOBER 2009 DEVICE OVERVIEW ISSI’s 512-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts ...

Page 2

IS43R86400D IS43/46R16320D, IS43/46R32160D FUNCTIONAL BLOCK DIAGRAM ( CK COMMAND CK DECODER CKE & CS CLOCK RAS GENERATOR CAS WE Mode Registers and Ext. Mode Registers A12 15 A11 A10 ROW ...

Page 3

IS43R86400D IS43/46R16320D, IS43/46R32160D FUNCTIONAL BLOCK DIAGRAM ( CK COMMAND CK DECODER CKE & CS CLOCK RAS GENERATOR CAS WE Mode Registers and Ext. Mode Registers A12 15 A11 A10 ROW ...

Page 4

IS43R86400D IS43/46R16320D, IS43/46R32160D PIN CONFIGURATIONS 66 pin TSOP - Type II for DQ0 DQ1 DQ2 DQ3 DDQ NC NC ...

Page 5

IS43R86400D IS43/46R16320D, IS43/46R32160D PIN CONFIGURATION Package Code B: 60-ball FBGA (top view) for x8 (8mm x 13mm Body, 0.8mm Ball Pitch) Top View (Balls seen through the Package) : Ball Existing : Depopulated Ball Top View(See the balls through the ...

Page 6

IS43R86400D IS43/46R16320D, IS43/46R32160D PIN CONFIGURATIONS 66 pin TSOP - Type II for x16 V DD DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 NC V DDQ LDQS NC ...

Page 7

IS43R86400D IS43/46R16320D, IS43/46R32160D PIN CONFIGURATION Package Code B: 60-ball FBGA (top view) for x16 (8mm x 13mm Body, 0.8mm Ball Pitch) Top View (Balls seen through the Package) : Ball Existing : Depopulated Ball Top View(See the balls through the ...

Page 8

IS43R86400D IS43/46R16320D, IS43/46R32160D PIN CONFIGURATION Package Code B: 144-ball FBGA (top view) (12mm x 12mm Body, 0.8mm Ball Pitch) Top View (Balls seen through the package DQS0 ...

Page 9

IS43R86400D IS43/46R16320D, IS43/46R32160D PIN FUNCTIONAL DESCRIPTIONS Symbol Type Description CK, CK Input Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge ...

Page 10

IS43R86400D IS43/46R16320D, IS43/46R32160D COMMANDS TRUTH TABLES All commands (address and control signals) are registered on the positive edge of clock (crossing of CK going high and CK going low). Truth Table shows basic timing parameters for all commands. TRUTH TABLE ...

Page 11

IS43R86400D IS43/46R16320D, IS43/46R32160D TRUTH TABLE - CKE CKE n-1 CKE n Current State L L Power Down L L Self Refresh L H Power Down L H Self Refresh H L All Banks Idle H L Bank(s) Active H L ...

Page 12

IS43R86400D IS43/46R16320D, IS43/46R32160D Power Applied Power On Precharge PREALL MRS EMRS Write Write A PREALL = Precharge All Banks CKEL = Enter Power Down MRS = Mode Register Set CKEH = Exit Power Down EMRS = Extended Mode Register Set ...

Page 13

... Step 2: CKE must maintain LVCMOS Low until VREF is stable. Apply VDDQ before applying VTT and VREF. • Step 3: There must be at least 200 μs of valid clocks before any command may be given to the DRAM. During this time NOP or DESELECT commands must be issued on the command bus and CKE should be brought HIGH. ...

Page 14

IS43R86400D IS43/46R16320D, IS43/46R32160D Initialization Waveform Sequence VDD tVDT≥ 0 VDDQ VTT (system ) 1 VREF tIS tIH CKE LVCMOS LOW LEVEL ( ( ) ) t IS tIH ( ( ...

Page 15

... IS43/46R16320D, IS43/46R32160D MODE REGISTER (MR) DEFINITION The Mode Register is used to define the specific mode of operation of the DDR SDRAM. This definition includes the definition of a burst length, a burst type, and a CAS latency. The Mode Register is programmed via the MODE REGISTER SET command (with BA0=0 and BA1=0) and will retain the stored information until it is reprogrammed, or the device loses power ...

Page 16

... IS43/46R16320D, IS43/46R32160D BURST LENGTH Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being set and the burst order as in Burst Definition. The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst lengths locations are available for both the sequential and the interleaved burst types ...

Page 17

IS43R86400D IS43/46R16320D, IS43/46R32160D When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within the block, meaning that the burst will wrap within ...

Page 18

IS43R86400D IS43/46R16320D, IS43/46R32160D 18 CAS LATENCIES Integrated Silicon Solution, Inc. Rev. 00A 09/14/09 ...

Page 19

... OUTPUT DRIVE STRENGTH (DS) The normal drive strength for all outputs is specified to be SSTL_2, Class II. This DRAM also supports a reduced driver strength option, intended for lighter load and/or point-to-point environments. I--V curves for the normal drive strength and weak drive strength are included in this datasheet ...

Page 20

IS43R86400D IS43/46R16320D, IS43/46R32160D Absolute Maximum Rating Parameter Voltage on any pin relative to VSS Voltage on VDD & VDDQ supply relative to VSS Storage temperature Power dissipation Short circuit current Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS ...

Page 21

IS43R86400D IS43/46R16320D, IS43/46R32160D CAPACITANCE CHARACTERISTICS ( 2.5V + 0.2V (-5, -6 ddq Symbol Parameter CI(A) Input Capacitance, address pin CI(C) Input Capacitance, control pin CI(K) Input Capacitance, CLK pin CI/O I/O Capacitance, I/O, DQS, DM ...

Page 22

IS43R86400D IS43/46R16320D, IS43/46R32160D IDD Specification Parameters and Test Conditions: x8, x16 ( 2.5V ± 0.2V (-5, -6 ddq dd Symbol Parameter/ Test Condition IDD0 Operating current for one bank active-precharge; tRC = tRC(min); tCK = ...

Page 23

IS43R86400D IS43/46R16320D, IS43/46R32160D IDD Specification Parameters and Test Conditions: x32 ( 2.5V ± 0.2V (-5, -6), Vss = VssQ = 0V, Output Open, unless otherwise noted) dd ddq Symbol Parameter/ Test Condition IDD0 Operating current for one ...

Page 24

IS43R86400D IS43/46R16320D, IS43/46R32160D AC TIMING REQUIREMENTS Absolute Specifications (VDD, VDDQ = +2.5 V ±0.1 V@-4) PARAMETER DQ output access time for CLK,/CLK DQS output access time for CLK,/CLK CLK high-level width CLK low-level width CLK half period CLK cycle time ...

Page 25

IS43R86400D IS43/46R16320D, IS43/46R32160D AC TIMING REQUIREMENTS Absolute Specifications (VDD, VDDQ = +2.5 V ±0.1 V@-4) PARAMETER ACTIVE to ACTIVE/Auto Refresh command period Auto Refresh to Active/Auto ACTIVE to READ or WRITE delay PRECHARGE command period Active to Autoprecharge Delay ACTIVE ...

Page 26

IS43R86400D IS43/46R16320D, IS43/46R32160D AC TIMING REQUIREMENTS Absolute Specifications (VDD, VDDQ = +2.5 V ±0.2 V@-5/-6) PARAMETER DQ output access time for CLK,/CLK DQS output access time for CLK,/CLK CLK high-level width CLK low-level width CLK half period CLK cycle time ...

Page 27

IS43R86400D IS43/46R16320D, IS43/46R32160D AC TIMING REQUIREMENTS Absolute Specifications (VDD, VDDQ = +2.5 V ±0.2 V@-5/-6) PARAMETER ACTIVE to ACTIVE/Auto Refresh command period Auto Refresh to Active/Auto ACTIVE to READ or WRITE delay PRECHARGE command period Active to Autoprecharge Delay ACTIVE ...

Page 28

... DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS. 17. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device. 18. tXPRD should be 200 tCLK in the condition of the unstable CLK operation during the power down mode. ...

Page 29

... MHz 6 IS43R16320D-6BL IS43R16320D-6TL Industrial Range: -40°C to +85°C Frequency Speed (ns) Order Part No. 200 MHz 5 IS43R16320D-5BLI IS43R16320D-5TLI 166 MHz 6 IS43R16320D-6BLI IS43R16320D-6TLI Automotive (A1) Range: -40°C to +85°C Frequency Speed (ns) Order Part No. 166 MHz 6 IS46R16320D-6BLA1 IS46R16320D-6TLA1 Integrated Silicon Solution, Inc. Rev. 00A 09/14/09 Package ...

Page 30

IS43R86400D IS43/46R16320D, IS43/46R32160D 16Mx32 ORDERING INFORMATION - VDD = 2.5V/2.6V Commercial Range: 0°C to +70°C Frequency Speed (ns) Order Part No. 200 MHz 5 IS43R32160D-5BL 166 MHz 6 IS43R32160D-6BL Industrial Range: -40°C to +85°C Frequency Speed (ns) Order Part No. ...

Page 31

IS43R86400D IS43/46R16320D, IS43/46R32160D Integrated Silicon Solution, Inc. Rev. 00A 09/14/09 31 ...

Page 32

IS43R86400D IS43/46R16320D, IS43/46R32160D Mini Ball Grid Array Package Code: B (60-Ball) 8mm x 13mm 32 Integrated Silicon Solution, Inc. Rev. 00A 09/14/09 ...

Page 33

IS43R86400D IS43/46R16320D, IS43/46R32160D Integrated Silicon Solution, Inc. Rev. 00A 09/14/09 33 ...

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