C8051F336-GMR Silicon Laboratories Inc, C8051F336-GMR Datasheet - Page 92
![Microcontrollers (MCU) 16KB 10ADC 10DAC 768Ram MCU Lead Free](/photos/16/2/160285/qfn-20_sml.jpg)
C8051F336-GMR
Manufacturer Part Number
C8051F336-GMR
Description
Microcontrollers (MCU) 16KB 10ADC 10DAC 768Ram MCU Lead Free
Manufacturer
Silicon Laboratories Inc
Datasheet
1.C8051F336-GM.pdf
(226 pages)
Specifications of C8051F336-GMR
Processor Series
C8051F3x
Core
8051
Data Bus Width
8 bit
Program Memory Type
Flash
Program Memory Size
16 KB
Data Ram Size
768 B
Interface Type
I2C, SPI, UART
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
17
Number Of Timers
4
Operating Supply Voltage
2.7 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
QFN-20
3rd Party Development Tools
KSK-SL-TOOLSTICK, PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F336DK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit
On-chip Dac
10 bit
Package
20QFN
Device Core
8051
Family Name
C8051F336
Maximum Speed
25 MHz
Ram Size
768 Byte
Operating Temperature
-40 to 85 °C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
C8051F336-GMR
Manufacturer:
SILICON
Quantity:
100
Part Number:
C8051F336-GMR
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
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C8051F336/7/8/9
16.1.3. Flash Write Procedure
Flash bytes are programmed by software with the following sequence:
1. Disable interrupts (recommended).
2. Erase the 512-byte Flash page containing the target location, as described in
Section
16.1.2.
3. Set the PSWE bit (register PSCTL).
4. Clear the PSEE bit (register PSCTL).
5. Write the first key code to FLKEY: 0xA5.
6. Write the second key code to FLKEY: 0xF1.
7. Using the MOVX instruction, write a single data byte to the desired location within the 512-byte sector.
8. Clear the PSWE bit.
Steps 5–7 must be repeated for each byte to be written. After Flash writes are complete, PSWE should be
cleared so that MOVX instructions do not target program memory.
16.2. Non-volatile Data Storage
The Flash memory can be used for non-volatile data storage as well as program code. This allows data
such as calibration coefficients to be calculated and stored at run time. Data is written using the MOVX
write instruction and read using the MOVC instruction. Note: MOVX read instructions always target XRAM.
92
Rev.1.0
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