MPC8541EVTAQF Freescale Semiconductor, MPC8541EVTAQF Datasheet - Page 20

• Manufacturer Part Number: MPC8541EVTAQF
• Description: IC MPU POWERQUICC III 783-FCPBGA
• Manufacturer: Freescale Semiconductor

Specifications of MPC8541EVTAQF

• Processor Type: MPC85xx PowerQUICC III 32-Bit
• Speed: 1.0GHz
• Voltage: 1.3V
• Mounting Type: Surface Mount
• Package / Case: 783-FCPBGA
• Processor Series: MPC85xx
• Core: e500
• Data Bus Width: 32 bit
• Development Tools By Supplier: RDK-IDM-SBC
• Maximum Clock Frequency: 1000 MHz
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• I/o Voltage: 2.5 V, 3.3 V
• Minimum Operating Temperature: 0 C
• For Use With: MPC8548CDS - DEV TOOLS CDS FOR 8548CWH-PPC-8540N-VE - KIT EVAL SYSTEM MPC8540
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Features: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

DUART
Figure 6
7
This section describes the DC and AC electrical specifications for the DUART interface of the
MPC8541E.
7.1
Table 16
20
High-level input voltage
Low-level input voltage
Input current
High-level output voltage
Low-level output voltage
Note:
1. Note that the symbol V
DUART
MPC8541E PowerQUICC™ III Integrated Communications Processor Hardware Specification, Rev. 4.2
provides the AC test load for the DDR bus.
provides the DC electrical characteristics for the DUART interface of the MPC8541E.
DUART DC Electrical Characteristics
Parameter
IN
V
V
Notes:
1. Data input threshold measurement point.
2. Data output measurement point.
Output
, in this case, represents the OV
OUT
TH
Symbol
Table 15. DDR SDRAM Measurement Conditions
Table 16. DUART DC Electrical Characteristics
Symbol
V
V
V
V
I
IN
OH
OL
IH
IL
Figure 6. DDR AC Test Load
Z
0
MV
= 50 Ω
OV
V
0.5 × GV
REF
IN
V
DD
V
OUT
DDR
1
Test Condition
OUT
I
= min, I
= 0 V or V
OH
± 0.31 V
OV
IN
≥ V
symbol referenced in
≤ V
DD
= –100 μA
DD
OH
OL
= min,
OL
(min) or
(max)
IN
= 100 μA
= V
DD
R
Unit
L
V
V
= 50 Ω
OV
Table 1
DD
–0.3
Min
—
—
2
– 0.2
Notes
GV
and
1
2
DD
Table
/2
OV
DD
Freescale Semiconductor
Max
2.
0.8
0.2
±5
—
+ 0.3
Unit
μA
V
V
V
V