Z0840004PSC Zilog, Z0840004PSC Datasheet - Page 93

IC 4MHZ Z80 NMOS CPU 40-DIP

Z0840004PSC

Manufacturer Part Number
Z0840004PSC
Description
IC 4MHZ Z80 NMOS CPU 40-DIP
Manufacturer
Zilog
Datasheet

Specifications of Z0840004PSC

Processor Type
Z80
Features
NMOS
Speed
4MHz
Voltage
5V
Mounting Type
Through Hole
Package / Case
40-DIP (0.620", 15.75mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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0
ZiLOG
ZAC03-0004
TERM
FIT:
FPO:
FQE:
Gate:
Gate oxide:
Generic:
Gettering:
Glass:
Hard Bake:
HAST:
HTOL:
IC:
Infant Mortality:
IQC:
K:
Layout:
LCC:
Lead:
Life Test:
LSI:
DEFINITION
“Failure units” or “Failure in Time,” a measure of failure rate
defined as one failure in 10
Finish Process Order. A lot traveler, which accompanies each lot
through the finish (Mark and Pack and FQA) areas.
Field Quality Engineer.
The gate of a transistor.
Dielectric oxide between the gate and the channel region of a
transistor.
Devices similar in process or function. ZiLOG uses a generic
approach in its Reliability Program. Devices built in the same wafer
fab process and having similar complexity or function are grouped
into a “generic” product family. Data on any device within a family
is considered indicative of the performance of all other devices in
that group and process line.
Trapping of contamination atoms (especially alkali ions) to prevent
their drift into device regions where they may affect electrical
performance.
The amorphous form of SiO
the wafer.
A step following dry masking, where the resist is heated to prepare
it for wet etch.
Highly Accelerated Stress Test.
High Temperature Operating Life.
Integrated Circuit.
Initial failure rate in life studies. It is followed by early failure
period and then final wear out portion of failure “bathtub” curve.
Incoming Quality Control.
Kilo, thousand, 10
A magnified, physical representation of an electronic circuit at the
transistor level.
Leadless Chip Carrier.
The external connection to a packaged integrated circuit.
A test for the purpose of estimating some characteristic(s) of a
device’s useful lifetime.
Large Scale Integration
3
.
9
, or one billion device hours.
2
, used in various insulating layers on
2002 Quality and Reliability Report
11- 4

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