2SK2907-01R Fuji Semiconductor, 2SK2907-01R Datasheet
2SK2907-01R
Manufacturer Part Number
2SK2907-01R
Description
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 5.7 Milliohms; ID +/-100A; TO-3PF; PD 125W; VF 1
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK2907-01R.pdf
(1 pages)
Specifications of 2SK2907-01R
Current, Drain
±100 A
Package Type
TO-3PF
Polarization
N-Channel
Power Dissipation
125 W
Resistance, Drain To Source On
5.7 Milliohms
Temperature, Operating, Maximum
+150 °C
Time, Turn-off Delay
160 ns
Time, Turn-on Delay
29 ns
Transconductance, Forward
55 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2907-01R
Manufacturer:
FUJI
Quantity:
5 340
Company:
Part Number:
2SK2907-01R
Manufacturer:
FUJITSU
Quantity:
12 500
2SK2907-01R
N-CHANNEL SILICON POWER MOS-FET
Item
Thermalcharacteristics
DC-DC converters
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Avalanche-proof
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Applications
Switching regulators
Thermal resistance
Item
Electrical characteristics (T
Features
off
on
c
=25°C unless otherwise specified)
Symbol
V
I
I
V
E
P
T
T
D
D(puls]
D
ch
stg
GS
AV *1
DS
R
R
Symbol
I
Symbol
BV
V
I
R
g
C
C
C
td
t
td
t
I
V
t
Q
th(ch-c)
th(ch-a)
DSS
GSS
AV
r
f
rr
fs
GS(th)
DS(on)
iss
oss
SD
rss
(on)
(off)
rr
DSS
Absolute maximum ratings
Rating
-55 to +150
±100
±400
1268.3
+150
±30
125
60
Test Conditions
I
I
V
V
V
V
f=1MHz
V
V
R
L=100 µ H T
I
I
-di/dt=100A/µs
Test Conditions
I
D
D
V
I
F
F
D
channel to ambient
D
GS
DS
GS
CC
GS
GS
=100A V
DS
=50A V
channel to case
=1mA
=10mA
GS
=50A
*1 L=0.169mH, Vcc=24V
=50A
=0V
=30V I
=10V
=10
=60V
=25V
=0V
=±30V
V
GS
V
GS
D
GS
ch
V
V
V
DS
=100A
=0V
DS
GS
DS
=25°C
=0V T
=10V
=25V
=0V
=0V
=V
T
ch
GS
Unit
=25°C
ch
°C
°C
V
A
A
V
W
mJ
=25°C
T
T
ch
ch
=25°C
=125°C
FUJI POWER MOS-FET
TO-3PF
Equivalent circuit schematic
5.45
2.1
0.3
Min.
0.2
Min.
Gate(G)
100
15.5
25
60
2.5
0.3
5.45
Typ.
Typ.
5400
2100
1.6
1.1
550
200
160
150
ø3.2
+0.2
—0.1
10
10
55
29
85
0.2
0.3
3.0
0.2
5.7
1.0
0.21
0.2
Source(S)
Drain(D)
1. Gate
2. Drain
3. Source
0.6
Max.
8100
3150
Max.
30.0
+0.2
500
100
830
350
240
230
1.0
50
5.5
3.5
1.0
7.8
1.5
0.3
3.2
3.5
Units
+0.3
Units
°C/W
°C/W
0.2
V
V
µA
mA
nA
m
S
pF
A
V
ns
µC
ns
1
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