2SK3522-01 Fuji Semiconductor, 2SK3522-01 Datasheet
2SK3522-01
Manufacturer Part Number
2SK3522-01
Description
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.2Ohm; ID +/-25A; TO-247; PD 335W; VGS +/-30V
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK3522-01.pdf
(1 pages)
Specifications of 2SK3522-01
Application
Used in switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.
Channel Type
N-Channel
Current, Drain
±25 A
Gate Charge, Total
54 nC
Operating And Storage Temperature
-55 to 150 °C
Package Type
TO-247
Polarization
N-Channel
Power Dissipation
335 W
Resistance, Drain To Source On
0.2 Ohm
Resistance, Thermal, Junction To Case
0.373 °C⁄W (Max.)
Temperature, Operating, Maximum
+150 °C
Thermal Resistance, Junction To Ambient
50 °C⁄W
Time, Turn-off Delay
75 ns
Time, Turn-on Delay
27 ns
Transconductance, Forward
22 S
Voltage, Breakdown, Drain To Source
500 V
Voltage, Diode Forward
0.98 V (Typ.)
Voltage, Drain To Source
500 V
Voltage, Forward, Diode
0.98 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3522-01
Manufacturer:
FSC
Quantity:
2 000
Company:
Part Number:
2SK3522-01
Manufacturer:
FUJI
Quantity:
3 260
Part Number:
2SK3522-01
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
Company:
Part Number:
2SK3522-01 21A 500V
Manufacturer:
FJUI
Quantity:
4 250
2SK3522-01
Super FAP-G Series
*1 L=987µH, Vcc=50V, See to Avalanche Energy Graph
*3 I
FUJI POWER MOSFET
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
F
= <
-I
D
, -di/dt=50A/µs, Vcc BV
off
on
= <
DSS
c
, Tch 150°C
=25°C unless otherwise specified)
V
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AR
Symbol
ch
stg
DSX *5
AS
D
DS
GS
DS
R
R
Symbol
= <
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
f
I
r
rr
/dt
fs
GS(th)
DSS
(BR)DSS
DS(on)
iss
oss
rss
G
GS
SD
GD
rr
(on)
(off)
*1
*4
*2
*3
*4 VDS 500V
Absolute maximum ratings
Ratings
*2 Tch 150°C
-55 to +150
Test Conditions
V
V
R
V
V
V
Test Conditions
I
I
I
I
V
V
f=1MHz
V
I
V
L=987 µ H T
I
I
-di/dt=100A/µs
channel to ambient
channel to case
D
D
D
D
D
F
F
< =
±100
+150
CC
GS
GS
DS
DS
GS
DS
GS
CC
GS
=21A V
=21A V
= 250 µ A
= 250 µ A
=10.5A
=10.5A
=21A
500
500
±25
±30
336.5
335
=300V I
=10
25
20
=500V V
=400V V
=10V
=±30V
=25V
=0V
=300V
=10V
5
2.50
= <
N-CHANNEL SILICON POWER MOSFET
GS
GS
*5 V
ch
V
V
V
D
=0V T
=0V
=25°C
GS
DS
DS
GS
GS
=10.5A
V
V
GS
GS
DS
=0V
=10V
=25V
=0V
=0V
T
=-30V
=0V
=V
ch
ch
kV/µs
kV/µs
W
°C
°C
=25°C
Unit
mJ
V
V
A
A
V
A
GS
=25°C
T
T
ch
ch
=125°C
=25°C
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
Min.
500
25
11
3.0
2280
Typ.
Typ.
320
10
22
16
27
37
75
54
16
20
10.0
11
0.20
0.98
0.7
Source(S)
Drain(D)
3420
Max.
250
100
480
50.0
Max.
113
25
24
41
56
17
81
24
30
0.373
5.0
0.26
1.50
11.6±0.2
Units
Units
°C/W
°C/W
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1
Related parts for 2SK3522-01
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
N-CHANNEL SILICON POWER MOSFET
Manufacturer:
Fuji Electric
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 7.5 Milliohms; ID +/-80A; TO-3P; PD 125W; VGS +/
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 1.08 Ohms; ID +/-40A; TO-247; PD 270W; VGS +/-3
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.29Ohm; ID +/-21A; TO-3PF; PD 160W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.12Ohm; ID +/-43A; TO-247; PD 600W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 5.7 Milliohms; ID +/-100A; TO-3PF; PD 125W; VF 1
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.09Ohm; ID +/-52A; TO-247; PD 600W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 1.46 Ohms; ID +/-7A; TO-220AB; PD 195W; VGS +/-
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 1.62 Ohms; ID +/-7A; TO-3P; PD 125W; VGS +/-35V
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 1.54 Ohms; ID +/-7A; TO-247; PD 195W; VGS +/-30
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 250V; RDS(ON) 75 Milliohms; ID +/-37A; TO-220AB; PD 270W; -55
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.29Ohm; ID +/-19A; TO-220AB; PD 270W; VGS +/-3
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 5 Milliohms; ID +/-80A; TO-220; PD 135W; VGS +/-
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.58Ohm; ID +/-12A; TO-220AB; PD 195W; VGS +/-3
Manufacturer:
Fuji Semiconductor
Datasheet:
Part Number:
Description:
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.33Ohm; ID +/-20A; TO-3P; PD 150W; VGS +/-30V
Manufacturer:
Fuji Semiconductor
Datasheet: