2SK3680-01 Fuji Semiconductor, 2SK3680-01 Datasheet
2SK3680-01
Manufacturer Part Number
2SK3680-01
Description
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.09Ohm; ID +/-52A; TO-247; PD 600W; VGS +/-30V
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK3680-01.pdf
(1 pages)
Specifications of 2SK3680-01
Application
For switching regulators, DC-DC converters, UPS
Channel Type
N-Channel
Current, Drain
±52 A
Gate Charge, Total
114 nC
Operating And Storage Temperature
-55 to 150 °C
Package Type
TO-247
Polarization
N-Channel
Power Dissipation
600 W
Resistance, Drain To Source On
0.09 Ohm
Resistance, Thermal, Junction To Case
0.208 °C⁄W (Max.)
Temperature, Operating, Maximum
+150 °C
Thermal Resistance, Junction To Ambient
50 °C⁄W
Time, Turn-off Delay
190 ns
Time, Turn-on Delay
80 ns
Transconductance, Forward
30 S
Voltage, Breakdown, Drain To Source
500 V
Voltage, Diode Forward
1.00 V (Typ.)
Voltage, Drain To Source
500 V
Voltage, Forward, Diode
1 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3680-01
Manufacturer:
APT
Quantity:
2 000
2SK3680-01
Super FAP-G Series
*1 See to Avalanche Current Graph
*2 See to Avalanche Energy Graph
*3 I
FUJI POWER MOSFET
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-Repetitive
Maximum avalanche current
Repetitive or
Maximum avalanche current
Non-Repetitive
Maximum avalanche energy
Maximum Drain-Source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Thermalcharacteristics
Item
F
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Electrical characteristics (T
Features
< =
High speed switching
No secondary breadown
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
-I
D
, -di/dt=50A/µs, V
off
on
CC
< =
BV
DSS
c
Symbol Ratings
V
V
I
I
V
I
I
E
dV
dV/dt
P
T
T
, Tch 150°C
D
AS
AR
D(puls]
=25°C unless otherwise specified)
AS
D
ch
stg
DSX
GS
DS
DS
/dt
< =
R
R
Low on-resistance
DC-DC converters
Symbol
Low driving power
I
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
DSS
GSS
AV
th(ch-c)
th(ch-a)
r
f
rr
fs
(BR)DSS
GS(th)
oss
DS(on)
iss
rss
G
GS
GD
SD
(on)
(off)
rr
-55 to +150
±208
+150
500
500
±52
±30
802.7
600
52
26
20
5
2.50
Absolute maximum ratings
Test Conditions
V
V
R
V
V
Test Conditions
I
I
V
I
I
V
V
f=1MHz
V
I
V
L=544 µ H T
I
I
-di/dt=100A/µs
channel to ambient
channel to case
D
D
D
D
D
F
F
CC
GS
GS
DS
DS
GS
DS
GS
CC
GS
=52A V
=52A V
= 250 µ A
= 250 µ A
=26A
=26A
=52A
=300V I
=10V
=10
=500V V
=400V V
=±30V
=25V
=0V
=10V
=250V
Unit
mJ
kV/s
kV/µs
W
°C
°C
V
V
A
A
V
A
A
N-CHANNEL SILICON POWER MOSFET
V
V
GS
GS
GS
ch
DS
V
D
=0V T
=0V
=25°C
DS
GS
GS
V
Tch=25°C
*1
Tch 150°C
*1
L=544µH
V
VDS 500V
*3
Ta=25°C
Tc=25°C
=26A
=10V
=25V
V
V
Remarks
GS
CC
DS
GS
=0V
=0V
=0V
T
< =
=50V *2
=V
=-30V
=0V
ch
< =
ch
=25°C
GS
=25°C
T
T
ch
ch
=125°C
=25°C
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
Min.
500
15
52
3.0
5350
Typ.
Typ.
760
103
190
114
10
30
42
80
49
36
40
19.0
0.09
1.00
0.83
Source(S)
Drain(D)
8025
1140
Max.
250
100
120
155
285
171
50.0
Max.
25
63
74
54
60
0.208
5.0
0.11
1.50
Units
Units
°C/W
°C/W
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1
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